High performance AlGaN/GaN HEMTs with recessed gate

Engineering & Materials Science

• Gates (transistor) 100%
• High electron mobility transistors 81%
• Sapphire 23%
• Cutoff frequency 20%
• Field effect transistors 18%
• Electrons 17%
• Substrates 12%
• Degradation 12%

Physics & Astronomy

• high electron mobility transistors 72%
• performance 31%
• T shape 20%
• unity 12%
• sapphire 11%
• cut-off 11%
• field effect transistors 11%
• degradation 10%
• saturation 9%
• oscillations 8%
• electrons 5%

Chemical Compounds

• Length 41%
• Fluorescence Maxima 30%
• Electron Mobility 28%
• Velocity 19%
• Electron Particle 12%