High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

Y. Sano, T. Yamada, J. Mita, K. Kaifu, H. Ishikawa, T. Egawa, M. Umeno

Research output: Contribution to conferencePaper

Abstract

High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.

Original languageEnglish
Pages81-82
Number of pages2
Publication statusPublished - 2001 Jan 1
EventDevice Research Conference (DRC) - Notre Dame, IN, United States
Duration: 2001 Jun 252001 Jun 27

Conference

ConferenceDevice Research Conference (DRC)
CountryUnited States
CityNotre Dame, IN
Period01/6/2501/6/27

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Sano, Y., Yamada, T., Mita, J., Kaifu, K., Ishikawa, H., Egawa, T., & Umeno, M. (2001). High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate. 81-82. Paper presented at Device Research Conference (DRC), Notre Dame, IN, United States.