Abstract
High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.
| Original language | English |
|---|---|
| Title of host publication | Annual Device Research Conference Digest |
| Pages | 81-82 |
| Number of pages | 2 |
| Publication status | Published - 2001 |
| Externally published | Yes |
| Event | Device Research Conference (DRC) - Notre Dame, IN Duration: 2001 Jun 25 → 2001 Jun 27 |
Other
| Other | Device Research Conference (DRC) |
|---|---|
| City | Notre Dame, IN |
| Period | 01/6/25 → 01/6/27 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate. / Sano, Y.; Yamada, T.; Mita, J.; Kaifu, K.; Ishikawa, Hiroyasu; Egawa, T.; Umeno, M.
Annual Device Research Conference Digest. 2001. p. 81-82.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate
AU - Sano, Y.
AU - Yamada, T.
AU - Mita, J.
AU - Kaifu, K.
AU - Ishikawa, Hiroyasu
AU - Egawa, T.
AU - Umeno, M.
PY - 2001
Y1 - 2001
N2 - High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.
AB - High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.
UR - http://www.scopus.com/inward/record.url?scp=0034875419&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034875419&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0034875419
SP - 81
EP - 82
BT - Annual Device Research Conference Digest
ER -