Abstract
High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.
Original language | English |
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Pages | 81-82 |
Number of pages | 2 |
Publication status | Published - 2001 Jan 1 |
Externally published | Yes |
Event | Device Research Conference (DRC) - Notre Dame, IN, United States Duration: 2001 Jun 25 → 2001 Jun 27 |
Conference
Conference | Device Research Conference (DRC) |
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Country/Territory | United States |
City | Notre Dame, IN |
Period | 01/6/25 → 01/6/27 |
ASJC Scopus subject areas
- Engineering(all)