High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

Y. Sano; T. Yamada; J. Mita; K. Kaifu; H. Ishikawa; T. Egawa; M. Umeno

High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

Y. Sano, T. Yamada, J. Mita, K. Kaifu, H. Ishikawa, T. Egawa, M. Umeno

Research output: Contribution to conference › Paper

Abstract

High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.

Original language	English
Pages	81-82
Number of pages	2
Publication status	Published - 2001 Jan 1
Event	Device Research Conference (DRC) - Notre Dame, IN, United States Duration: 2001 Jun 25 → 2001 Jun 27

Conference

Conference	Device Research Conference (DRC)
Country	United States
City	Notre Dame, IN
Period	01/6/25 → 01/6/27

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ASJC Scopus subject areas

Engineering(all)

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Sano, Y., Yamada, T., Mita, J., Kaifu, K., Ishikawa, H., Egawa, T., & Umeno, M. (2001). High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate. 81-82. Paper presented at Device Research Conference (DRC), Notre Dame, IN, United States.

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title = "High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate",

abstract = "High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.",

author = "Y. Sano and T. Yamada and J. Mita and K. Kaifu and H. Ishikawa and T. Egawa and M. Umeno",

year = "2001",

month = jan

day = "1",

language = "English",

pages = "81--82",

note = "Device Research Conference (DRC) ; Conference date: 25-06-2001 Through 27-06-2001",

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TY - CONF

T1 - High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

AU - Sano, Y.

AU - Yamada, T.

AU - Mita, J.

AU - Kaifu, K.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Umeno, M.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.

AB - High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.

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M3 - Paper

AN - SCOPUS:0034875419

SP - 81

EP - 82

T2 - Device Research Conference (DRC)

Y2 - 25 June 2001 through 27 June 2001

ER -

High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

Abstract

Conference

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