High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

Y. Sano, T. Yamada, J. Mita, K. Kaifu, Hiroyasu Ishikawa, T. Egawa, M. Umeno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.

Original languageEnglish
Title of host publicationAnnual Device Research Conference Digest
Pages81-82
Number of pages2
Publication statusPublished - 2001
Externally publishedYes
EventDevice Research Conference (DRC) - Notre Dame, IN
Duration: 2001 Jun 252001 Jun 27

Other

OtherDevice Research Conference (DRC)
CityNotre Dame, IN
Period01/6/2501/6/27

Fingerprint

Gates (transistor)
High electron mobility transistors
Sapphire
Substrates
Reactive ion etching
Transconductance
Etching
Degradation
Metals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Sano, Y., Yamada, T., Mita, J., Kaifu, K., Ishikawa, H., Egawa, T., & Umeno, M. (2001). High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate. In Annual Device Research Conference Digest (pp. 81-82)

High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate. / Sano, Y.; Yamada, T.; Mita, J.; Kaifu, K.; Ishikawa, Hiroyasu; Egawa, T.; Umeno, M.

Annual Device Research Conference Digest. 2001. p. 81-82.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sano, Y, Yamada, T, Mita, J, Kaifu, K, Ishikawa, H, Egawa, T & Umeno, M 2001, High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate. in Annual Device Research Conference Digest. pp. 81-82, Device Research Conference (DRC), Notre Dame, IN, 01/6/25.
Sano Y, Yamada T, Mita J, Kaifu K, Ishikawa H, Egawa T et al. High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate. In Annual Device Research Conference Digest. 2001. p. 81-82
Sano, Y. ; Yamada, T. ; Mita, J. ; Kaifu, K. ; Ishikawa, Hiroyasu ; Egawa, T. ; Umeno, M. / High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate. Annual Device Research Conference Digest. 2001. pp. 81-82
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AU - Umeno, M.

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