High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD

T. Egawa, B. Zhang, Hiroyasu Ishikawa

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

We report on the high-performance of InGaN multiple-quantum well light-emitting diodes (LEDs) on Si (111) substrates using metal-organic chemical vapor deposition. A high-temperature thin AlN layer and AlN-GaN multilayers have been used for the growth of high-quality GaN-based LED structure on Si substrate. It is found that the operating voltage of the LED at 20 mA is reduced to as low as 3.8-4.1 V due to the formation of tunnel junction between the n-AlGaN layer and the n-Si substrate when the high-temperature AlN layer is reduced to 3 nm. Because Si has a better thermal conductivity than sapphire, the optical output power of the LED on Si saturates at a higher injected current density. When the injected current density is higher than 120 A/cm2, the output power of the LED on Si is higher than that of LED on sapphire. The LED also exhibited the good reliability and the uniform emission from a large size wafer. Cross-sectional transmission electron microscopy observation indicated that the active layer of these LEDs consists of the dislocation-free pyramid-shaped (quantum-dot-like) structure.

Original languageEnglish
Pages (from-to)169-171
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number3
DOIs
Publication statusPublished - 2005 Mar
Externally publishedYes

Fingerprint

Metallorganic chemical vapor deposition
Silicon
Light emitting diodes
Substrates
Aluminum Oxide
Sapphire
Current density
Organic Chemicals
Tunnel junctions
Organic chemicals
Semiconductor quantum wells
Semiconductor quantum dots
Chemical vapor deposition
Thermal conductivity
Multilayers
Metals
Transmission electron microscopy
Temperature
Electric potential

Keywords

  • AIN layer
  • InGaN
  • Light-emitting diodes (LEDs) on Si
  • Metal-organic chemical vapor deposition (MOCVD)
  • V-defect

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD. / Egawa, T.; Zhang, B.; Ishikawa, Hiroyasu.

In: IEEE Electron Device Letters, Vol. 26, No. 3, 03.2005, p. 169-171.

Research output: Contribution to journalArticle

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