High power AlGaAs/GaAs HBTs for Ka-band operation

Chang Woo Kim, Shinichi Tanaka, Yasushi Amamiya, Naoki Furuhata, Hidenori Shimawaki, Yosuke Miyoshi, Norio Goto, Kazuhiko Honjo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

AlGaAs/GaAs power HBTs have been developed for operation in the 26 GHz band. The HBTs were designed for improved thermal stability and power gain. A common-base HBT with a 480-μm2 emitter area achieved a 0.65 W CW output power with 34% collector efficiency, 16% power-added efficiency, and 6 dB linear power gain at 26.85 GHz. A 960-μm2 CB HBT produced an output power of 0.8 W with 5.6 dB linear power gain at 26.2 GHz.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages159-162
Number of pages4
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - San Diego, CA, USA
Duration: 1995 Oct 291995 Nov 1

Other

OtherProceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
CitySan Diego, CA, USA
Period95/10/2995/11/1

Fingerprint

Heterojunction bipolar transistors
Collector efficiency
Thermodynamic stability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kim, C. W., Tanaka, S., Amamiya, Y., Furuhata, N., Shimawaki, H., Miyoshi, Y., ... Honjo, K. (1995). High power AlGaAs/GaAs HBTs for Ka-band operation. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 159-162). Piscataway, NJ, United States: IEEE.

High power AlGaAs/GaAs HBTs for Ka-band operation. / Kim, Chang Woo; Tanaka, Shinichi; Amamiya, Yasushi; Furuhata, Naoki; Shimawaki, Hidenori; Miyoshi, Yosuke; Goto, Norio; Honjo, Kazuhiko.

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Piscataway, NJ, United States : IEEE, 1995. p. 159-162.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, CW, Tanaka, S, Amamiya, Y, Furuhata, N, Shimawaki, H, Miyoshi, Y, Goto, N & Honjo, K 1995, High power AlGaAs/GaAs HBTs for Ka-band operation. in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE, Piscataway, NJ, United States, pp. 159-162, Proceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, San Diego, CA, USA, 95/10/29.
Kim CW, Tanaka S, Amamiya Y, Furuhata N, Shimawaki H, Miyoshi Y et al. High power AlGaAs/GaAs HBTs for Ka-band operation. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Piscataway, NJ, United States: IEEE. 1995. p. 159-162
Kim, Chang Woo ; Tanaka, Shinichi ; Amamiya, Yasushi ; Furuhata, Naoki ; Shimawaki, Hidenori ; Miyoshi, Yosuke ; Goto, Norio ; Honjo, Kazuhiko. / High power AlGaAs/GaAs HBTs for Ka-band operation. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Piscataway, NJ, United States : IEEE, 1995. pp. 159-162
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AB - AlGaAs/GaAs power HBTs have been developed for operation in the 26 GHz band. The HBTs were designed for improved thermal stability and power gain. A common-base HBT with a 480-μm2 emitter area achieved a 0.65 W CW output power with 34% collector efficiency, 16% power-added efficiency, and 6 dB linear power gain at 26.85 GHz. A 960-μm2 CB HBT produced an output power of 0.8 W with 5.6 dB linear power gain at 26.2 GHz.

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