High power AlGaAs/GaAs HBTs for Ka-band operation

Chang Woo Kim, Shinichi Tanaka, Yasushi Amamiya, Naoki Furuhata, Hidenori Shimawaki, Yosuke Miyoshi, Norio Goto, Kazuhiko Honjo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

AlGaAs/GaAs power HBTs have been developed for operation in the 26 GHz band. The HBTs were designed for improved thermal stability and power gain. A common-base HBT with a 480-μm2 emitter area achieved a 0.65 W CW output power with 34% collector efficiency, 16% power-added efficiency, and 6 dB linear power gain at 26.85 GHz. A 960-μm2 CB HBT produced an output power of 0.8 W with 5.6 dB linear power gain at 26.2 GHz.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages159-162
Number of pages4
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - San Diego, CA, USA
Duration: 1995 Oct 291995 Nov 1

Other

OtherProceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
CitySan Diego, CA, USA
Period95/10/2995/11/1

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kim, C. W., Tanaka, S., Amamiya, Y., Furuhata, N., Shimawaki, H., Miyoshi, Y., ... Honjo, K. (1995). High power AlGaAs/GaAs HBTs for Ka-band operation. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 159-162). Piscataway, NJ, United States: IEEE.