Abstract
The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 × 300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.
| Original language | English |
|---|---|
| Pages (from-to) | 775-776 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 40 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2004 Jun 10 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H., & Egawa, T. (2004). High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates. Electronics Letters, 40(12), 775-776. https://doi.org/10.1049/el:20040512