High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

K. Shiojima, T. Makimura, T. Kosugi, S. Sugitani, N. Shigekawa, H. Ishikawa, T. Egawa

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Abstract

The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 × 300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.

Original languageEnglish
Pages (from-to)775-776
Number of pages2
JournalElectronics Letters
Volume40
Issue number12
DOIs
Publication statusPublished - 2004 Jun 10

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H., & Egawa, T. (2004). High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates. Electronics Letters, 40(12), 775-776. https://doi.org/10.1049/el:20040512