High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

K. Shiojima, T. Makimura, T. Kosugi, S. Sugitani, N. Shigekawa, Hiroyasu Ishikawa, T. Egawa

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 × 300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.

Original languageEnglish
Pages (from-to)775-776
Number of pages2
JournalElectronics Letters
Volume40
Issue number12
DOIs
Publication statusPublished - 2004 Jun 10
Externally publishedYes

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High electron mobility transistors
Demonstrations
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H., & Egawa, T. (2004). High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates. Electronics Letters, 40(12), 775-776. https://doi.org/10.1049/el:20040512

High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates. / Shiojima, K.; Makimura, T.; Kosugi, T.; Sugitani, S.; Shigekawa, N.; Ishikawa, Hiroyasu; Egawa, T.

In: Electronics Letters, Vol. 40, No. 12, 10.06.2004, p. 775-776.

Research output: Contribution to journalArticle

Shiojima, K, Makimura, T, Kosugi, T, Sugitani, S, Shigekawa, N, Ishikawa, H & Egawa, T 2004, 'High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates', Electronics Letters, vol. 40, no. 12, pp. 775-776. https://doi.org/10.1049/el:20040512
Shiojima, K. ; Makimura, T. ; Kosugi, T. ; Sugitani, S. ; Shigekawa, N. ; Ishikawa, Hiroyasu ; Egawa, T. / High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates. In: Electronics Letters. 2004 ; Vol. 40, No. 12. pp. 775-776.
@article{759e1e13292d402ebbcb7e1dc7aa14b3,
title = "High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates",
abstract = "The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 × 300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.",
author = "K. Shiojima and T. Makimura and T. Kosugi and S. Sugitani and N. Shigekawa and Hiroyasu Ishikawa and T. Egawa",
year = "2004",
month = "6",
day = "10",
doi = "10.1049/el:20040512",
language = "English",
volume = "40",
pages = "775--776",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "12",

}

TY - JOUR

T1 - High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

AU - Shiojima, K.

AU - Makimura, T.

AU - Kosugi, T.

AU - Sugitani, S.

AU - Shigekawa, N.

AU - Ishikawa, Hiroyasu

AU - Egawa, T.

PY - 2004/6/10

Y1 - 2004/6/10

N2 - The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 × 300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.

AB - The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 × 300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.

UR - http://www.scopus.com/inward/record.url?scp=3042691894&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042691894&partnerID=8YFLogxK

U2 - 10.1049/el:20040512

DO - 10.1049/el:20040512

M3 - Article

VL - 40

SP - 775

EP - 776

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 12

ER -