High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

K. Shiojima; T. Makimura; T. Kosugi; S. Sugitani; N. Shigekawa; H. Ishikawa; T. Egawa

doi:10.1049/el:20040512

High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

K. Shiojima, T. Makimura, T. Kosugi, S. Sugitani, N. Shigekawa, H. Ishikawa, T. Egawa

Research output: Contribution to journal › Article

20 Citations (Scopus)

Abstract

The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 × 300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.

Original language	English
Pages (from-to)	775-776
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	12
DOIs	https://doi.org/10.1049/el:20040512
Publication status	Published - 2004 Jun 10

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ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H., & Egawa, T. (2004). High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates. Electronics Letters, 40(12), 775-776. https://doi.org/10.1049/el:20040512

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AU - Ishikawa, H.

AU - Egawa, T.

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AB - The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 × 300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.

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Access to Document

10.1049/el:20040512