Abstract
The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 × 300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.
Original language | English |
---|---|
Pages (from-to) | 775-776 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 40 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2004 Jun 10 |
Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering