High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

K. Shiojima; T. Makimura; T. Kosugi; S. Sugitani; N. Shigekawa; H. Ishikawa; T. Egawa

doi:10.1049/el:20040512

High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

K. Shiojima, T. Makimura, T. Kosugi, S. Sugitani, N. Shigekawa, H. Ishikawa, T. Egawa

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 × 300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.

Original language	English
Pages (from-to)	775-776
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	12
DOIs	https://doi.org/10.1049/el:20040512
Publication status	Published - 2004 Jun 10
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:20040512

Fingerprint Dive into the research topics of 'High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates'. Together they form a unique fingerprint.

Cite this

@article{759e1e13292d402ebbcb7e1dc7aa14b3,

title = "High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates",

abstract = "The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 × 300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.",

author = "K. Shiojima and T. Makimura and T. Kosugi and S. Sugitani and N. Shigekawa and H. Ishikawa and T. Egawa",

year = "2004",

month = jun,

day = "10",

doi = "10.1049/el:20040512",

language = "English",

volume = "40",

pages = "775--776",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "12",

}

TY - JOUR

T1 - High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

AU - Shiojima, K.

AU - Makimura, T.

AU - Kosugi, T.

AU - Sugitani, S.

AU - Shigekawa, N.

AU - Ishikawa, H.

AU - Egawa, T.

PY - 2004/6/10

Y1 - 2004/6/10

N2 - The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 × 300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.

AB - The first demonstration of dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-power mixers is presented. The 0.7 × 300 μm gate device achieved the maximum output power of 19.6 dBm and upconversion gain of 11 dB at 2 GHz and 13 dBm and 5 dB at 5 GHz.

UR - http://www.scopus.com/inward/record.url?scp=3042691894&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042691894&partnerID=8YFLogxK

U2 - 10.1049/el:20040512

DO - 10.1049/el:20040512

M3 - Article

AN - SCOPUS:3042691894

VL - 40

SP - 775

EP - 776

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 12

ER -