High-power, high-efficiency cell design for 26 GHz HBT power amplifier

S. Tanaka, S. Murakami, Y. Amamiya, H. Shimawaki, N. Furuhata, N. Goto, K. Honjo, Y. Ishida, Y. Saito, K. Yamamoto, M. Yajima, R. Temino, Y. Hisada

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

We describe a 6-chip combination HBT power amplifier and a single-cell chip with excellent power-added efficiency (PAE) and power density at 24-26 GHz. The power amplifier, based on our conventional chip design, exhibited 2.2 W output power with 19% PAE and 5 dB linear gain. To further improve the efficiency and power-density, various types of HBT cells were characterized. The optimum cell (184 μm2) exhibited 740 mW output power equivalent to power density of 4.0 mW/μm2, while a record high PAE of 42% was obtained. These results compare well with the best data reported at lower frequency bands (<18 GHz), thereby showing great potential for high-power, high-efficiency HBTs in near mmWave bands.

Original languageEnglish
Pages (from-to)843-846
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
Publication statusPublished - 1996 Jan 1
EventProceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) - San Franscisco, CA, USA
Duration: 1996 Jun 171996 Jun 21

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Tanaka, S., Murakami, S., Amamiya, Y., Shimawaki, H., Furuhata, N., Goto, N., Honjo, K., Ishida, Y., Saito, Y., Yamamoto, K., Yajima, M., Temino, R., & Hisada, Y. (1996). High-power, high-efficiency cell design for 26 GHz HBT power amplifier. IEEE MTT-S International Microwave Symposium Digest, 2, 843-846.