High-power, high-efficiency cell design for 26 GHz HBT power amplifier

Shinichi Tanaka, S. Murakami, Y. Amamiya, H. Shimawaki, N. Furuhata, N. Goto, K. Honjo, Y. Ishida, Y. Saito, K. Yamamoto, M. Yajima, R. Temino, Y. Hisada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We describe a 6-chip combination HBT power amplifier and a single-cell chip with excellent power-added efficiency (PAE) and power density at 24-26 GHz. The power amplifier, based on our conventional chip design, exhibited 2.2 W output power with 19% PAE and 5 dB linear gain. To further improve the efficiency and power-density, various types of HBT cells were characterized. The optimum cell (184 μm 2) exhibited 740 mW output power equivalent to power density of 4.0 mW/μm 2, while a record high PAE of 42% was obtained. These results compare well with the best data reported at lower frequency bands (<18 GHz), thereby showing great potential for high-power, high-efficiency HBTs in near mmWave bands.

Original languageEnglish
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
PublisherIEEE
Pages843-846
Number of pages4
Volume2
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) - San Franscisco, CA, USA
Duration: 1996 Jun 171996 Jun 21

Other

OtherProceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3)
CitySan Franscisco, CA, USA
Period96/6/1796/6/21

Fingerprint

Heterojunction bipolar transistors
power efficiency
power amplifiers
Power amplifiers
radiant flux density
chips
cells
output
low frequencies
Frequency bands

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Tanaka, S., Murakami, S., Amamiya, Y., Shimawaki, H., Furuhata, N., Goto, N., ... Hisada, Y. (1996). High-power, high-efficiency cell design for 26 GHz HBT power amplifier. In IEEE MTT-S International Microwave Symposium Digest (Vol. 2, pp. 843-846). IEEE.

High-power, high-efficiency cell design for 26 GHz HBT power amplifier. / Tanaka, Shinichi; Murakami, S.; Amamiya, Y.; Shimawaki, H.; Furuhata, N.; Goto, N.; Honjo, K.; Ishida, Y.; Saito, Y.; Yamamoto, K.; Yajima, M.; Temino, R.; Hisada, Y.

IEEE MTT-S International Microwave Symposium Digest. Vol. 2 IEEE, 1996. p. 843-846.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tanaka, S, Murakami, S, Amamiya, Y, Shimawaki, H, Furuhata, N, Goto, N, Honjo, K, Ishida, Y, Saito, Y, Yamamoto, K, Yajima, M, Temino, R & Hisada, Y 1996, High-power, high-efficiency cell design for 26 GHz HBT power amplifier. in IEEE MTT-S International Microwave Symposium Digest. vol. 2, IEEE, pp. 843-846, Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3), San Franscisco, CA, USA, 96/6/17.
Tanaka S, Murakami S, Amamiya Y, Shimawaki H, Furuhata N, Goto N et al. High-power, high-efficiency cell design for 26 GHz HBT power amplifier. In IEEE MTT-S International Microwave Symposium Digest. Vol. 2. IEEE. 1996. p. 843-846
Tanaka, Shinichi ; Murakami, S. ; Amamiya, Y. ; Shimawaki, H. ; Furuhata, N. ; Goto, N. ; Honjo, K. ; Ishida, Y. ; Saito, Y. ; Yamamoto, K. ; Yajima, M. ; Temino, R. ; Hisada, Y. / High-power, high-efficiency cell design for 26 GHz HBT power amplifier. IEEE MTT-S International Microwave Symposium Digest. Vol. 2 IEEE, 1996. pp. 843-846
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abstract = "We describe a 6-chip combination HBT power amplifier and a single-cell chip with excellent power-added efficiency (PAE) and power density at 24-26 GHz. The power amplifier, based on our conventional chip design, exhibited 2.2 W output power with 19{\%} PAE and 5 dB linear gain. To further improve the efficiency and power-density, various types of HBT cells were characterized. The optimum cell (184 μm 2) exhibited 740 mW output power equivalent to power density of 4.0 mW/μm 2, while a record high PAE of 42{\%} was obtained. These results compare well with the best data reported at lower frequency bands (<18 GHz), thereby showing great potential for high-power, high-efficiency HBTs in near mmWave bands.",
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AU - Goto, N.

AU - Honjo, K.

AU - Ishida, Y.

AU - Saito, Y.

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AU - Temino, R.

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