High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates

Masahiro Sakai, Kenta Asano, Subramaniam Arulkumaran, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Tomohiko Shibata, Mitsuhiro Tanaka, Osamu Oda

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have demonstrated AlGaN/GaN high electron mobility transistors (HEMTs) grown on epitaxial AlN/sapphire templates. The crystal qualities and fabricated device performances between AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates and conventional AlGaN/GaN HEMTs on sapphire substrates with low-temperature buffer layer (LTBLs) are compared with each other. By using epitaxial AlN/sapphire templates instead of LT-BLs, higher mobility was exhibited and superior crystal qualities were observed, as confirmed by X-ray diffraction (XRD), atomic force microscopy (AFM) images and capacitance-voltage measurements. In addition, the dc characteristics of the fabricated devices on epitaxial AlN/sapphire templates were enhanced. AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates are promising candidates for practical applications of nitride-based electronic devices.

Original languageEnglish
Pages (from-to)2071-2076
Number of pages6
JournalIEICE Transactions on Electronics
VolumeE86-C
Issue number10
Publication statusPublished - 2003 Oct
Externally publishedYes

Fingerprint

Aluminum Oxide
High electron mobility transistors
Sapphire
Crystals
Capacitance measurement
Voltage measurement
Buffer layers
Nitrides
aluminum gallium nitride
Atomic force microscopy
X ray diffraction
Substrates

Keywords

  • AlGaN/GaN
  • AlN
  • HEMT
  • Template

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Sakai, M., Asano, K., Arulkumaran, S., Ishikawa, H., Egawa, T., Jimbo, T., ... Oda, O. (2003). High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates. IEICE Transactions on Electronics, E86-C(10), 2071-2076.

High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates. / Sakai, Masahiro; Asano, Kenta; Arulkumaran, Subramaniam; Ishikawa, Hiroyasu; Egawa, Takashi; Jimbo, Takashi; Shibata, Tomohiko; Tanaka, Mitsuhiro; Oda, Osamu.

In: IEICE Transactions on Electronics, Vol. E86-C, No. 10, 10.2003, p. 2071-2076.

Research output: Contribution to journalArticle

Sakai, M, Asano, K, Arulkumaran, S, Ishikawa, H, Egawa, T, Jimbo, T, Shibata, T, Tanaka, M & Oda, O 2003, 'High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates', IEICE Transactions on Electronics, vol. E86-C, no. 10, pp. 2071-2076.
Sakai M, Asano K, Arulkumaran S, Ishikawa H, Egawa T, Jimbo T et al. High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates. IEICE Transactions on Electronics. 2003 Oct;E86-C(10):2071-2076.
Sakai, Masahiro ; Asano, Kenta ; Arulkumaran, Subramaniam ; Ishikawa, Hiroyasu ; Egawa, Takashi ; Jimbo, Takashi ; Shibata, Tomohiko ; Tanaka, Mitsuhiro ; Oda, Osamu. / High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates. In: IEICE Transactions on Electronics. 2003 ; Vol. E86-C, No. 10. pp. 2071-2076.
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