High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates

Masahiro Sakai, Kenta Asano, Subramaniam Arulkumaran, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Tomohiko Shibata, Mitsuhiro Tanaka, Osamu Oda

Research output: Contribution to journalArticle

1 Citation (Scopus)


We have demonstrated AlGaN/GaN high electron mobility transistors (HEMTs) grown on epitaxial AlN/sapphire templates. The crystal qualities and fabricated device performances between AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates and conventional AlGaN/GaN HEMTs on sapphire substrates with low-temperature buffer layer (LTBLs) are compared with each other. By using epitaxial AlN/sapphire templates instead of LT-BLs, higher mobility was exhibited and superior crystal qualities were observed, as confirmed by X-ray diffraction (XRD), atomic force microscopy (AFM) images and capacitance-voltage measurements. In addition, the dc characteristics of the fabricated devices on epitaxial AlN/sapphire templates were enhanced. AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates are promising candidates for practical applications of nitride-based electronic devices.

Original languageEnglish
Pages (from-to)2071-2076
Number of pages6
JournalIEICE Transactions on Electronics
Issue number10
Publication statusPublished - 2003 Oct


  • AlGaN/GaN
  • AlN
  • HEMT
  • Template

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Sakai, M., Asano, K., Arulkumaran, S., Ishikawa, H., Egawa, T., Jimbo, T., Shibata, T., Tanaka, M., & Oda, O. (2003). High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates. IEICE Transactions on Electronics, E86-C(10), 2071-2076.