High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates

Engineering & Materials Science

• Sapphire 100%
• High electron mobility transistors 86%
• Crystals 24%
• Capacitance measurement 18%
• Buffer layers 17%
• Atomic force microscopy 15%
• Voltage measurement 15%
• Nitrides 15%
• X ray diffraction 12%
• Substrates 8%
• Temperature 5%

Chemical Compounds

• Electron Mobility 89%
• Atomic Force Microscopy 9%
• Compound Mobility 9%
• Buffer Solution 8%
• X-Ray Diffraction 6%
• Application 3%