High-Quality GaN Growth on AlN/Sapphire Templates by MOVPE

M. Sakai, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno, T. Shibata, K. Asai, S. Sumiya, Y. Kuraoka?2?

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)783-788
JournalInst. Phys. Conf. Ser.
Publication statusPublished - 2002 Jan 1

Cite this

Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Umeno, M., Shibata, T., ... Kuraoka?2?, Y. (2002). High-Quality GaN Growth on AlN/Sapphire Templates by MOVPE. Inst. Phys. Conf. Ser., 783-788.

High-Quality GaN Growth on AlN/Sapphire Templates by MOVPE. / Sakai, M.; Ishikawa, H.; Egawa, T.; Jimbo, T.; Umeno, M.; Shibata, T.; Asai, K.; Sumiya, S.; Kuraoka?2?, Y.

In: Inst. Phys. Conf. Ser., 01.01.2002, p. 783-788.

Research output: Contribution to journalArticle

Sakai, M, Ishikawa, H, Egawa, T, Jimbo, T, Umeno, M, Shibata, T, Asai, K, Sumiya, S & Kuraoka?2?, Y 2002, 'High-Quality GaN Growth on AlN/Sapphire Templates by MOVPE', Inst. Phys. Conf. Ser., pp. 783-788.
Sakai M, Ishikawa H, Egawa T, Jimbo T, Umeno M, Shibata T et al. High-Quality GaN Growth on AlN/Sapphire Templates by MOVPE. Inst. Phys. Conf. Ser. 2002 Jan 1;783-788.
Sakai, M. ; Ishikawa, H. ; Egawa, T. ; Jimbo, T. ; Umeno, M. ; Shibata, T. ; Asai, K. ; Sumiya, S. ; Kuraoka?2?, Y. / High-Quality GaN Growth on AlN/Sapphire Templates by MOVPE. In: Inst. Phys. Conf. Ser. 2002 ; pp. 783-788.
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