High-Quality GaN on Si substrate by use of AlGaN/AlN Intermediate layer

H. Ishikawa, Z. Y. Zhao, N. Nakada, T. Egawa, T. Soga, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

9 Citations (Scopus)
Original languageEnglish
Pages (from-to)Mo_056
JournalDefault journal
Publication statusPublished - 1999 Jul 1

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Ishikawa, H., Zhao, Z. Y., Nakada, N., Egawa, T., Soga, T., Jimbo, T., & Umeno, M. (1999). High-Quality GaN on Si substrate by use of AlGaN/AlN Intermediate layer. Default journal, Mo_056.