High-Quality GaN on Si substrate by use of AlGaN/AlN Intermediate layer

H. Ishikawa, Z. Y. Zhao, N. Nakada, T. Egawa, T. Soga, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

9 Citations (Scopus)
Original languageEnglish
Pages (from-to)Mo_056
JournalDefault journal
Publication statusPublished - 1999 Jul 1

Cite this

Ishikawa, H., Zhao, Z. Y., Nakada, N., Egawa, T., Soga, T., Jimbo, T., & Umeno, M. (1999). High-Quality GaN on Si substrate by use of AlGaN/AlN Intermediate layer. Default journal, Mo_056.

High-Quality GaN on Si substrate by use of AlGaN/AlN Intermediate layer. / Ishikawa, H.; Zhao, Z. Y.; Nakada, N.; Egawa, T.; Soga, T.; Jimbo, T.; Umeno, M.

In: Default journal, 01.07.1999, p. Mo_056.

Research output: Contribution to journalArticle

Ishikawa, H, Zhao, ZY, Nakada, N, Egawa, T, Soga, T, Jimbo, T & Umeno, M 1999, 'High-Quality GaN on Si substrate by use of AlGaN/AlN Intermediate layer', Default journal, pp. Mo_056.
Ishikawa H, Zhao ZY, Nakada N, Egawa T, Soga T, Jimbo T et al. High-Quality GaN on Si substrate by use of AlGaN/AlN Intermediate layer. Default journal. 1999 Jul 1;Mo_056.
Ishikawa, H. ; Zhao, Z. Y. ; Nakada, N. ; Egawa, T. ; Soga, T. ; Jimbo, T. ; Umeno, M. / High-Quality GaN on Si substrate by use of AlGaN/AlN Intermediate layer. In: Default journal. 1999 ; pp. Mo_056.
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AU - Soga, T.

AU - Jimbo, T.

AU - Umeno, M.

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