Abstract
A single crystal GaN thin film was successfully grown on a Si(111) substrate by means of atmospheric-pressure metalorganic chemical vapor deposition. An intermediate layer consisting of AlN and AlGaN improved the quality of GaN on Si with a mirror-like surface and reduced the pits and cracks over the surface. The full width at half maximum (FWHM) of the double-crystal X-ray rocking curve for GAN(0004) was 600 arcsec. Photoluminescence measurement at 4.2 K for a non-doped film revealed a sharp band-edge emission with a FWHM of 8.8 meV, which is the narrowest value reported to date. GaInN multi-quantum-well structure was grown on this structure and showed a strong blue emission peaking at 470 nm. The results suggest GaN on Si with an AlGaN/AlN intermediate layer provides reliable light emitting devices on Si substrate.
| Original language | English |
|---|---|
| Pages (from-to) | 599-603 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 176 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1999 Nov 1 |
| Externally published | Yes |
| Event | Proceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) - Montpellier, France Duration: 1999 Jul 4 → 1999 Jul 9 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics