High-quality GaN on Si substrate using AlGaN/AlN intermediate layer

Hiroyasu Ishikawa, G. Y. Zhao, N. Nakada, T. Egawa, T. Soga, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

67 Citations (Scopus)

Abstract

A single crystal GaN thin film was successfully grown on a Si(111) substrate by means of atmospheric-pressure metalorganic chemical vapor deposition. An intermediate layer consisting of AlN and AlGaN improved the quality of GaN on Si with a mirror-like surface and reduced the pits and cracks over the surface. The full width at half maximum (FWHM) of the double-crystal X-ray rocking curve for GAN(0004) was 600 arcsec. Photoluminescence measurement at 4.2 K for a non-doped film revealed a sharp band-edge emission with a FWHM of 8.8 meV, which is the narrowest value reported to date. GaInN multi-quantum-well structure was grown on this structure and showed a strong blue emission peaking at 470 nm. The results suggest GaN on Si with an AlGaN/AlN intermediate layer provides reliable light emitting devices on Si substrate.

Original languageEnglish
Pages (from-to)599-603
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume176
Issue number1
DOIs
Publication statusPublished - 1999 Nov
Externally publishedYes

Fingerprint

Full width at half maximum
Metallorganic chemical vapor deposition
Substrates
Semiconductor quantum wells
Atmospheric pressure
metalorganic chemical vapor deposition
atmospheric pressure
Photoluminescence
Mirrors
cracks
quantum wells
Single crystals
mirrors
Cracks
photoluminescence
X rays
Thin films
Crystals
single crystals
curves

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

High-quality GaN on Si substrate using AlGaN/AlN intermediate layer. / Ishikawa, Hiroyasu; Zhao, G. Y.; Nakada, N.; Egawa, T.; Soga, T.; Jimbo, T.; Umeno, M.

In: Physica Status Solidi (A) Applied Research, Vol. 176, No. 1, 11.1999, p. 599-603.

Research output: Contribution to journalArticle

Ishikawa, Hiroyasu ; Zhao, G. Y. ; Nakada, N. ; Egawa, T. ; Soga, T. ; Jimbo, T. ; Umeno, M. / High-quality GaN on Si substrate using AlGaN/AlN intermediate layer. In: Physica Status Solidi (A) Applied Research. 1999 ; Vol. 176, No. 1. pp. 599-603.
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AU - Soga, T.

AU - Jimbo, T.

AU - Umeno, M.

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