Abstract
A single crystal GaN thin film was successfully grown on a Si(111) substrate by means of atmospheric-pressure metalorganic chemical vapor deposition. An intermediate layer consisting of AlN and AlGaN improved the quality of GaN on Si with a mirror-like surface and reduced the pits and cracks over the surface. The full width at half maximum (FWHM) of the double-crystal X-ray rocking curve for GAN(0004) was 600 arcsec. Photoluminescence measurement at 4.2 K for a non-doped film revealed a sharp band-edge emission with a FWHM of 8.8 meV, which is the narrowest value reported to date. GaInN multi-quantum-well structure was grown on this structure and showed a strong blue emission peaking at 470 nm. The results suggest GaN on Si with an AlGaN/AlN intermediate layer provides reliable light emitting devices on Si substrate.
| Original language | English |
|---|---|
| Pages (from-to) | 599-603 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 176 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1999 Nov |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
High-quality GaN on Si substrate using AlGaN/AlN intermediate layer. / Ishikawa, Hiroyasu; Zhao, G. Y.; Nakada, N.; Egawa, T.; Soga, T.; Jimbo, T.; Umeno, M.
In: Physica Status Solidi (A) Applied Research, Vol. 176, No. 1, 11.1999, p. 599-603.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-quality GaN on Si substrate using AlGaN/AlN intermediate layer
AU - Ishikawa, Hiroyasu
AU - Zhao, G. Y.
AU - Nakada, N.
AU - Egawa, T.
AU - Soga, T.
AU - Jimbo, T.
AU - Umeno, M.
PY - 1999/11
Y1 - 1999/11
N2 - A single crystal GaN thin film was successfully grown on a Si(111) substrate by means of atmospheric-pressure metalorganic chemical vapor deposition. An intermediate layer consisting of AlN and AlGaN improved the quality of GaN on Si with a mirror-like surface and reduced the pits and cracks over the surface. The full width at half maximum (FWHM) of the double-crystal X-ray rocking curve for GAN(0004) was 600 arcsec. Photoluminescence measurement at 4.2 K for a non-doped film revealed a sharp band-edge emission with a FWHM of 8.8 meV, which is the narrowest value reported to date. GaInN multi-quantum-well structure was grown on this structure and showed a strong blue emission peaking at 470 nm. The results suggest GaN on Si with an AlGaN/AlN intermediate layer provides reliable light emitting devices on Si substrate.
AB - A single crystal GaN thin film was successfully grown on a Si(111) substrate by means of atmospheric-pressure metalorganic chemical vapor deposition. An intermediate layer consisting of AlN and AlGaN improved the quality of GaN on Si with a mirror-like surface and reduced the pits and cracks over the surface. The full width at half maximum (FWHM) of the double-crystal X-ray rocking curve for GAN(0004) was 600 arcsec. Photoluminescence measurement at 4.2 K for a non-doped film revealed a sharp band-edge emission with a FWHM of 8.8 meV, which is the narrowest value reported to date. GaInN multi-quantum-well structure was grown on this structure and showed a strong blue emission peaking at 470 nm. The results suggest GaN on Si with an AlGaN/AlN intermediate layer provides reliable light emitting devices on Si substrate.
UR - http://www.scopus.com/inward/record.url?scp=0033221699&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033221699&partnerID=8YFLogxK
U2 - 10.1002/(SICI)1521-396X(199911)176:1<599::AID-PSSA599>3.0.CO;2-F
DO - 10.1002/(SICI)1521-396X(199911)176:1<599::AID-PSSA599>3.0.CO;2-F
M3 - Article
AN - SCOPUS:0033221699
VL - 176
SP - 599
EP - 603
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 1
ER -