High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector

N. Nakada, M. Nakaji, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)C-6-4
JournalDefault journal
Publication statusPublished - 1999 Sep 1

Cite this

Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Jimbo, T., & Umeno, M. (1999). High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector. Default journal, C-6-4.

High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector. / Nakada, N.; Nakaji, M.; Ishikawa, H.; Egawa, T.; Jimbo, T.; Umeno, M.

In: Default journal, 01.09.1999, p. C-6-4.

Research output: Contribution to journalArticle

Nakada, N. ; Nakaji, M. ; Ishikawa, H. ; Egawa, T. ; Jimbo, T. ; Umeno, M. / High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector. In: Default journal. 1999 ; pp. C-6-4.
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AU - Nakaji, M.

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AU - Egawa, T.

AU - Jimbo, T.

AU - Umeno, M.

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