| Original language | English |
|---|---|
| Pages (from-to) | C-6-4 |
| Journal | Default journal |
| Publication status | Published - 1999 Sep 1 |
Cite this
Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Jimbo, T., & Umeno, M. (1999). High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector. Default journal, C-6-4.
High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector. / Nakada, N.; Nakaji, M.; Ishikawa, H.; Egawa, T.; Jimbo, T.; Umeno, M.
In: Default journal, 01.09.1999, p. C-6-4.Research output: Contribution to journal › Article
Nakada, N, Nakaji, M, Ishikawa, H, Egawa, T, Jimbo, T & Umeno, M 1999, 'High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector', Default journal, pp. C-6-4.
Nakada N, Nakaji M, Ishikawa H, Egawa T, Jimbo T, Umeno M. High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector. Default journal. 1999 Sep 1;C-6-4.
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title = "High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector",
author = "N. Nakada and M. Nakaji and H. Ishikawa and T. Egawa and T. Jimbo and M. Umeno",
year = "1999",
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T1 - High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector
AU - Nakada, N.
AU - Nakaji, M.
AU - Ishikawa, H.
AU - Egawa, T.
AU - Jimbo, T.
AU - Umeno, M.
PY - 1999/9/1
Y1 - 1999/9/1
M3 - Article
SP - C-6-4
JO - Default journal
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