High-quality quaternary AlInGaN epilayers on sapphire

Yang Liu, Takashi Egawa, Hiroyasu Ishikawa, Takashi Jimbo

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Quaternary AlInGaN epilayers were grown on sapphire substrates by atmospheric pressure metalorganic chemical vapour deposition (MOCVD). The characterization data indicate that the grown quaternary AlInGaN epilayers are of high-quality. The influence of indium incorporation on the properties of quaternary epilayers were studied. The PL spectra of the quaternary layers showed narrow full-width at half-maximum (FWHM) values (52 meV) at room temperature, which are comparable to that of GaN. The X-ray rocking curves of quaternary layers for (0004) diffraction exhibited narrow FWHM values ranged from 250 to 280 arcsec. To the best of our knowledge, these are the best results among those published in the literature.

Original languageEnglish
Pages (from-to)36-39
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume200
Issue number1
DOIs
Publication statusPublished - 2003 Nov
Externally publishedYes

Fingerprint

Aluminum Oxide
Epilayers
Sapphire
sapphire
Full width at half maximum
metalorganic chemical vapor deposition
indium
atmospheric pressure
Indium
Metallorganic chemical vapor deposition
Atmospheric pressure
room temperature
curves
Diffraction
diffraction
X rays
x rays
Substrates
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

High-quality quaternary AlInGaN epilayers on sapphire. / Liu, Yang; Egawa, Takashi; Ishikawa, Hiroyasu; Jimbo, Takashi.

In: Physica Status Solidi (A) Applied Research, Vol. 200, No. 1, 11.2003, p. 36-39.

Research output: Contribution to journalArticle

Liu, Yang ; Egawa, Takashi ; Ishikawa, Hiroyasu ; Jimbo, Takashi. / High-quality quaternary AlInGaN epilayers on sapphire. In: Physica Status Solidi (A) Applied Research. 2003 ; Vol. 200, No. 1. pp. 36-39.
@article{010dbdb820eb4ae6bd4d625f25973059,
title = "High-quality quaternary AlInGaN epilayers on sapphire",
abstract = "Quaternary AlInGaN epilayers were grown on sapphire substrates by atmospheric pressure metalorganic chemical vapour deposition (MOCVD). The characterization data indicate that the grown quaternary AlInGaN epilayers are of high-quality. The influence of indium incorporation on the properties of quaternary epilayers were studied. The PL spectra of the quaternary layers showed narrow full-width at half-maximum (FWHM) values (52 meV) at room temperature, which are comparable to that of GaN. The X-ray rocking curves of quaternary layers for (0004) diffraction exhibited narrow FWHM values ranged from 250 to 280 arcsec. To the best of our knowledge, these are the best results among those published in the literature.",
author = "Yang Liu and Takashi Egawa and Hiroyasu Ishikawa and Takashi Jimbo",
year = "2003",
month = "11",
doi = "10.1002/pssa.200303469",
language = "English",
volume = "200",
pages = "36--39",
journal = "Physica Status Solidi (A) Applied Research",
issn = "0031-8965",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - High-quality quaternary AlInGaN epilayers on sapphire

AU - Liu, Yang

AU - Egawa, Takashi

AU - Ishikawa, Hiroyasu

AU - Jimbo, Takashi

PY - 2003/11

Y1 - 2003/11

N2 - Quaternary AlInGaN epilayers were grown on sapphire substrates by atmospheric pressure metalorganic chemical vapour deposition (MOCVD). The characterization data indicate that the grown quaternary AlInGaN epilayers are of high-quality. The influence of indium incorporation on the properties of quaternary epilayers were studied. The PL spectra of the quaternary layers showed narrow full-width at half-maximum (FWHM) values (52 meV) at room temperature, which are comparable to that of GaN. The X-ray rocking curves of quaternary layers for (0004) diffraction exhibited narrow FWHM values ranged from 250 to 280 arcsec. To the best of our knowledge, these are the best results among those published in the literature.

AB - Quaternary AlInGaN epilayers were grown on sapphire substrates by atmospheric pressure metalorganic chemical vapour deposition (MOCVD). The characterization data indicate that the grown quaternary AlInGaN epilayers are of high-quality. The influence of indium incorporation on the properties of quaternary epilayers were studied. The PL spectra of the quaternary layers showed narrow full-width at half-maximum (FWHM) values (52 meV) at room temperature, which are comparable to that of GaN. The X-ray rocking curves of quaternary layers for (0004) diffraction exhibited narrow FWHM values ranged from 250 to 280 arcsec. To the best of our knowledge, these are the best results among those published in the literature.

UR - http://www.scopus.com/inward/record.url?scp=0346255544&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0346255544&partnerID=8YFLogxK

U2 - 10.1002/pssa.200303469

DO - 10.1002/pssa.200303469

M3 - Article

VL - 200

SP - 36

EP - 39

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 1

ER -