Abstract
Copper (Cu) damascene interconnects with a cobalt tungsten phosphorus (CoWP) capping layer were developed using an alkaline-metal-free electroless plating process without palladium (Pd) catalyst activation. The wafer contamination level after processing is consistent with requirements for present LSI fabrication lines. Within wafer CoWP deposition uniformity is high and interconnects wire resistance increases by less than 5% after deposition. Electromigration (EM) testing shows no failures after two thousand hours and stress induced voiding (SIV) testing shows no failures after three thousand hours. This EM result is a 2 order of magnitude improvement over a non CoWP process.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the IEEE 2004 International Interconnect Technology Conference |
| Pages | 75-77 |
| Number of pages | 3 |
| Publication status | Published - 2004 |
| Externally published | Yes |
| Event | Proceedings of the IEEE 2004 International Interconnect Technology Conference - Burlingame, CA Duration: 2004 Jun 7 → 2004 Jun 9 |
Other
| Other | Proceedings of the IEEE 2004 International Interconnect Technology Conference |
|---|---|
| City | Burlingame, CA |
| Period | 04/6/7 → 04/6/9 |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
Cite this
High reliability Cu interconnection utilizing a low contamination CoWP capping layer. / Ishigami, T.; Kurokawa, T.; Kakuhara, Y.; Withers, B.; Jacobs, J.; Kolics, A.; Ivanov, I.; Sekine, M.; Ueno, Kazuyoshi.
Proceedings of the IEEE 2004 International Interconnect Technology Conference. 2004. p. 75-77.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High reliability Cu interconnection utilizing a low contamination CoWP capping layer
AU - Ishigami, T.
AU - Kurokawa, T.
AU - Kakuhara, Y.
AU - Withers, B.
AU - Jacobs, J.
AU - Kolics, A.
AU - Ivanov, I.
AU - Sekine, M.
AU - Ueno, Kazuyoshi
PY - 2004
Y1 - 2004
N2 - Copper (Cu) damascene interconnects with a cobalt tungsten phosphorus (CoWP) capping layer were developed using an alkaline-metal-free electroless plating process without palladium (Pd) catalyst activation. The wafer contamination level after processing is consistent with requirements for present LSI fabrication lines. Within wafer CoWP deposition uniformity is high and interconnects wire resistance increases by less than 5% after deposition. Electromigration (EM) testing shows no failures after two thousand hours and stress induced voiding (SIV) testing shows no failures after three thousand hours. This EM result is a 2 order of magnitude improvement over a non CoWP process.
AB - Copper (Cu) damascene interconnects with a cobalt tungsten phosphorus (CoWP) capping layer were developed using an alkaline-metal-free electroless plating process without palladium (Pd) catalyst activation. The wafer contamination level after processing is consistent with requirements for present LSI fabrication lines. Within wafer CoWP deposition uniformity is high and interconnects wire resistance increases by less than 5% after deposition. Electromigration (EM) testing shows no failures after two thousand hours and stress induced voiding (SIV) testing shows no failures after three thousand hours. This EM result is a 2 order of magnitude improvement over a non CoWP process.
UR - http://www.scopus.com/inward/record.url?scp=8644266012&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=8644266012&partnerID=8YFLogxK
M3 - Conference contribution
SN - 0780383087
SP - 75
EP - 77
BT - Proceedings of the IEEE 2004 International Interconnect Technology Conference
ER -