Abstract
Copper (Cu) damascene interconnects with a cobalt tungsten phosphorus (CoWP) capping layer were developed using an alkaline-metal-free electroless plating process without palladium (Pd) catalyst activation. The wafer contamination level after processing is consistent with requirements for present LSI fabrication lines. Within wafer CoWP deposition uniformity is high and interconnects wire resistance increases by less than 5% after deposition. Electromigration (EM) testing shows no failures after two thousand hours and stress induced voiding (SIV) testing shows no failures after three thousand hours. This EM result is a 2 order of magnitude improvement over a non CoWP process.
| Original language | English |
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| Title of host publication | Proceedings of the IEEE 2004 International Interconnect Technology Conference |
| Pages | 75-77 |
| Number of pages | 3 |
| Publication status | Published - 2004 Nov 25 |
| Event | Proceedings of the IEEE 2004 International Interconnect Technology Conference - Burlingame, CA, United States Duration: 2004 Jun 7 → 2004 Jun 9 |
Publication series
| Name | Proceedings of the IEEE 2004 International Interconnect Technology Conference |
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Conference
| Conference | Proceedings of the IEEE 2004 International Interconnect Technology Conference |
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| Country | United States |
| City | Burlingame, CA |
| Period | 04/6/7 → 04/6/9 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Ishigami, T., Kurokawa, T., Kakuhara, Y., Withers, B., Jacobs, J., Kolics, A., Ivanov, I., Sekine, M., & Ueno, K. (2004). High reliability Cu interconnection utilizing a low contamination CoWP capping layer. In Proceedings of the IEEE 2004 International Interconnect Technology Conference (pp. 75-77). (Proceedings of the IEEE 2004 International Interconnect Technology Conference).