High reliability Cu interconnection utilizing a low contamination CoWP capping layer

T. Ishigami, T. Kurokawa, Y. Kakuhara, B. Withers, J. Jacobs, A. Kolics, I. Ivanov, M. Sekine, Kazuyoshi Ueno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

Copper (Cu) damascene interconnects with a cobalt tungsten phosphorus (CoWP) capping layer were developed using an alkaline-metal-free electroless plating process without palladium (Pd) catalyst activation. The wafer contamination level after processing is consistent with requirements for present LSI fabrication lines. Within wafer CoWP deposition uniformity is high and interconnects wire resistance increases by less than 5% after deposition. Electromigration (EM) testing shows no failures after two thousand hours and stress induced voiding (SIV) testing shows no failures after three thousand hours. This EM result is a 2 order of magnitude improvement over a non CoWP process.

Original languageEnglish
Title of host publicationProceedings of the IEEE 2004 International Interconnect Technology Conference
Pages75-77
Number of pages3
Publication statusPublished - 2004
Externally publishedYes
EventProceedings of the IEEE 2004 International Interconnect Technology Conference - Burlingame, CA
Duration: 2004 Jun 72004 Jun 9

Other

OtherProceedings of the IEEE 2004 International Interconnect Technology Conference
CityBurlingame, CA
Period04/6/704/6/9

Fingerprint

Electromigration
Contamination
Electroless plating
Testing
Palladium
Tungsten
Phosphorus
Cobalt
Chemical activation
Wire
Copper
Fabrication
Catalysts
Processing
Metals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ishigami, T., Kurokawa, T., Kakuhara, Y., Withers, B., Jacobs, J., Kolics, A., ... Ueno, K. (2004). High reliability Cu interconnection utilizing a low contamination CoWP capping layer. In Proceedings of the IEEE 2004 International Interconnect Technology Conference (pp. 75-77)

High reliability Cu interconnection utilizing a low contamination CoWP capping layer. / Ishigami, T.; Kurokawa, T.; Kakuhara, Y.; Withers, B.; Jacobs, J.; Kolics, A.; Ivanov, I.; Sekine, M.; Ueno, Kazuyoshi.

Proceedings of the IEEE 2004 International Interconnect Technology Conference. 2004. p. 75-77.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ishigami, T, Kurokawa, T, Kakuhara, Y, Withers, B, Jacobs, J, Kolics, A, Ivanov, I, Sekine, M & Ueno, K 2004, High reliability Cu interconnection utilizing a low contamination CoWP capping layer. in Proceedings of the IEEE 2004 International Interconnect Technology Conference. pp. 75-77, Proceedings of the IEEE 2004 International Interconnect Technology Conference, Burlingame, CA, 04/6/7.
Ishigami T, Kurokawa T, Kakuhara Y, Withers B, Jacobs J, Kolics A et al. High reliability Cu interconnection utilizing a low contamination CoWP capping layer. In Proceedings of the IEEE 2004 International Interconnect Technology Conference. 2004. p. 75-77
Ishigami, T. ; Kurokawa, T. ; Kakuhara, Y. ; Withers, B. ; Jacobs, J. ; Kolics, A. ; Ivanov, I. ; Sekine, M. ; Ueno, Kazuyoshi. / High reliability Cu interconnection utilizing a low contamination CoWP capping layer. Proceedings of the IEEE 2004 International Interconnect Technology Conference. 2004. pp. 75-77
@inproceedings{0f5ccfae450a41cc84740a963449e2f4,
title = "High reliability Cu interconnection utilizing a low contamination CoWP capping layer",
abstract = "Copper (Cu) damascene interconnects with a cobalt tungsten phosphorus (CoWP) capping layer were developed using an alkaline-metal-free electroless plating process without palladium (Pd) catalyst activation. The wafer contamination level after processing is consistent with requirements for present LSI fabrication lines. Within wafer CoWP deposition uniformity is high and interconnects wire resistance increases by less than 5{\%} after deposition. Electromigration (EM) testing shows no failures after two thousand hours and stress induced voiding (SIV) testing shows no failures after three thousand hours. This EM result is a 2 order of magnitude improvement over a non CoWP process.",
author = "T. Ishigami and T. Kurokawa and Y. Kakuhara and B. Withers and J. Jacobs and A. Kolics and I. Ivanov and M. Sekine and Kazuyoshi Ueno",
year = "2004",
language = "English",
isbn = "0780383087",
pages = "75--77",
booktitle = "Proceedings of the IEEE 2004 International Interconnect Technology Conference",

}

TY - GEN

T1 - High reliability Cu interconnection utilizing a low contamination CoWP capping layer

AU - Ishigami, T.

AU - Kurokawa, T.

AU - Kakuhara, Y.

AU - Withers, B.

AU - Jacobs, J.

AU - Kolics, A.

AU - Ivanov, I.

AU - Sekine, M.

AU - Ueno, Kazuyoshi

PY - 2004

Y1 - 2004

N2 - Copper (Cu) damascene interconnects with a cobalt tungsten phosphorus (CoWP) capping layer were developed using an alkaline-metal-free electroless plating process without palladium (Pd) catalyst activation. The wafer contamination level after processing is consistent with requirements for present LSI fabrication lines. Within wafer CoWP deposition uniformity is high and interconnects wire resistance increases by less than 5% after deposition. Electromigration (EM) testing shows no failures after two thousand hours and stress induced voiding (SIV) testing shows no failures after three thousand hours. This EM result is a 2 order of magnitude improvement over a non CoWP process.

AB - Copper (Cu) damascene interconnects with a cobalt tungsten phosphorus (CoWP) capping layer were developed using an alkaline-metal-free electroless plating process without palladium (Pd) catalyst activation. The wafer contamination level after processing is consistent with requirements for present LSI fabrication lines. Within wafer CoWP deposition uniformity is high and interconnects wire resistance increases by less than 5% after deposition. Electromigration (EM) testing shows no failures after two thousand hours and stress induced voiding (SIV) testing shows no failures after three thousand hours. This EM result is a 2 order of magnitude improvement over a non CoWP process.

UR - http://www.scopus.com/inward/record.url?scp=8644266012&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=8644266012&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:8644266012

SN - 0780383087

SP - 75

EP - 77

BT - Proceedings of the IEEE 2004 International Interconnect Technology Conference

ER -