High reliability Cu interconnection utilizing a low contamination CoWP capping layer

T. Ishigami, T. Kurokawa, Y. Kakuhara, B. Withers, J. Jacobs, A. Kolics, I. Ivanov, M. Sekine, K. Ueno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

Copper (Cu) damascene interconnects with a cobalt tungsten phosphorus (CoWP) capping layer were developed using an alkaline-metal-free electroless plating process without palladium (Pd) catalyst activation. The wafer contamination level after processing is consistent with requirements for present LSI fabrication lines. Within wafer CoWP deposition uniformity is high and interconnects wire resistance increases by less than 5% after deposition. Electromigration (EM) testing shows no failures after two thousand hours and stress induced voiding (SIV) testing shows no failures after three thousand hours. This EM result is a 2 order of magnitude improvement over a non CoWP process.

Original languageEnglish
Title of host publicationProceedings of the IEEE 2004 International Interconnect Technology Conference
Pages75-77
Number of pages3
Publication statusPublished - 2004 Nov 25
EventProceedings of the IEEE 2004 International Interconnect Technology Conference - Burlingame, CA, United States
Duration: 2004 Jun 72004 Jun 9

Publication series

NameProceedings of the IEEE 2004 International Interconnect Technology Conference

Conference

ConferenceProceedings of the IEEE 2004 International Interconnect Technology Conference
CountryUnited States
CityBurlingame, CA
Period04/6/704/6/9

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ishigami, T., Kurokawa, T., Kakuhara, Y., Withers, B., Jacobs, J., Kolics, A., Ivanov, I., Sekine, M., & Ueno, K. (2004). High reliability Cu interconnection utilizing a low contamination CoWP capping layer. In Proceedings of the IEEE 2004 International Interconnect Technology Conference (pp. 75-77). (Proceedings of the IEEE 2004 International Interconnect Technology Conference).