HIGH-SPEED FREQUENCY DIVIDER USING N** plus -Ge GATE AlGaAs/GaAs MISFET'S.

Shuichi Fujita, Makoto Hirano, Koichi Maezawa, Takashi Mizutani

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A high-speed divide-by-four static frequency divider is fabricated using n** plus -Ge gate AlGaAs/GaAs heterostructure MISFETs. The divider circuit consists of two master-slave T-type flip-flops (T-F/Fs) and an output buffer based on source-coupled FET logic. A maximum toggle frequency of 11. 3 GHz with a power dissipation of 219 mW per T-F/F is obtained at 300 K using 1. 0- mu m gate FETs.

Original languageEnglish
Pages (from-to)226-227
Number of pages2
JournalElectron device letters
VolumeEDL-8
Issue number5
Publication statusPublished - 1987 May
Externally publishedYes

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Field effect transistors
Flip flop circuits
Heterojunctions
Energy dissipation
Buffers
Networks (circuits)
gallium arsenide

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Fujita, S., Hirano, M., Maezawa, K., & Mizutani, T. (1987). HIGH-SPEED FREQUENCY DIVIDER USING N** plus -Ge GATE AlGaAs/GaAs MISFET'S. Electron device letters, EDL-8(5), 226-227.

HIGH-SPEED FREQUENCY DIVIDER USING N** plus -Ge GATE AlGaAs/GaAs MISFET'S. / Fujita, Shuichi; Hirano, Makoto; Maezawa, Koichi; Mizutani, Takashi.

In: Electron device letters, Vol. EDL-8, No. 5, 05.1987, p. 226-227.

Research output: Contribution to journalArticle

Fujita, S, Hirano, M, Maezawa, K & Mizutani, T 1987, 'HIGH-SPEED FREQUENCY DIVIDER USING N** plus -Ge GATE AlGaAs/GaAs MISFET'S.', Electron device letters, vol. EDL-8, no. 5, pp. 226-227.
Fujita S, Hirano M, Maezawa K, Mizutani T. HIGH-SPEED FREQUENCY DIVIDER USING N** plus -Ge GATE AlGaAs/GaAs MISFET'S. Electron device letters. 1987 May;EDL-8(5):226-227.
Fujita, Shuichi ; Hirano, Makoto ; Maezawa, Koichi ; Mizutani, Takashi. / HIGH-SPEED FREQUENCY DIVIDER USING N** plus -Ge GATE AlGaAs/GaAs MISFET'S. In: Electron device letters. 1987 ; Vol. EDL-8, No. 5. pp. 226-227.
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