High-speed InP/InGaAs DHBTs with ballistic collector launcher structure

A. Fujihara, Y. Ikenaga, H. Takahashi, M. Kawanaka, Shinichi Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We demonstrate high-speed InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with significantly improved collector carrier transport. The proposed collector design scheme allows for using moderate collector thickness to achieve high f max (∼ 300 GHz) while maintaining high f T (∼ 200 GHz). The DHBTs will meet the demand of ultra-high-speed applications for both high f T and high f max.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Pages772-775
Number of pages4
Publication statusPublished - 2001
Externally publishedYes
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: 2001 Dec 22001 Dec 5

Other

OtherIEEE International Electron Devices Meeting IEDM 2001
CountryUnited States
CityWashington, DC
Period01/12/201/12/5

Fingerprint

Heterojunction bipolar transistors
Ballistics
Carrier transport

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Fujihara, A., Ikenaga, Y., Takahashi, H., Kawanaka, M., & Tanaka, S. (2001). High-speed InP/InGaAs DHBTs with ballistic collector launcher structure. In Technical Digest - International Electron Devices Meeting (pp. 772-775)

High-speed InP/InGaAs DHBTs with ballistic collector launcher structure. / Fujihara, A.; Ikenaga, Y.; Takahashi, H.; Kawanaka, M.; Tanaka, Shinichi.

Technical Digest - International Electron Devices Meeting. 2001. p. 772-775.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fujihara, A, Ikenaga, Y, Takahashi, H, Kawanaka, M & Tanaka, S 2001, High-speed InP/InGaAs DHBTs with ballistic collector launcher structure. in Technical Digest - International Electron Devices Meeting. pp. 772-775, IEEE International Electron Devices Meeting IEDM 2001, Washington, DC, United States, 01/12/2.
Fujihara A, Ikenaga Y, Takahashi H, Kawanaka M, Tanaka S. High-speed InP/InGaAs DHBTs with ballistic collector launcher structure. In Technical Digest - International Electron Devices Meeting. 2001. p. 772-775
Fujihara, A. ; Ikenaga, Y. ; Takahashi, H. ; Kawanaka, M. ; Tanaka, Shinichi. / High-speed InP/InGaAs DHBTs with ballistic collector launcher structure. Technical Digest - International Electron Devices Meeting. 2001. pp. 772-775
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