High-speed rotating-disk chemical vapor deposition process for in-situ arsenic-doped polycrystalline silicon films

Fujio Terai, Hiroaki Kobayashi, Shuji Katsui, Naoki Tamaoki, Takao Nagatomo, Tetsuya Homma

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have developed high-speed rotating-disk chemical vapor deposition (CVD) equipment for polycrystalline silicon (poly-Si) films. This CVD equipment has an enhanced ability to reduce the boundary layer thickness at a given temperature above a wafer surface, and to suppress vapor-phase reactions. We investigated in-situ arsenic-doped poly-Si film deposition using silane (SiH4), arsine (AsH3) and nitrogen (N2) in a high-speed rotating-disk CVD as functions of AsH3 flow rate and deposition temperature. Both the deposition rate and resistivity decreased with increasing AsH3 flow rate. A deposition rate of 120 nm/min, a resistivity of 16 mω.cm, a film thickness nonuniformity of ±5%, and a number of particles of less than 20 (over 200 nm in diameter) were achieved at a deposition temperature of 680°C for in-situ arsenic-doped poly-Si deposition on a 200-mm-diameter silicon (Si) wafer. Moreover, it was confirmed that the concentration of As in the poly-Si film was low at the initial stage of deposition, and that this process has a high gap filling capability in a hole of 0.18 μm width and 7 μm depth. It was also confirmed that there were conditions for a high step coverage of more than 1. These properties are inferred to be due to the adsorbed AsH3 preventing the adsorption of SiH4

Original languageEnglish
Pages (from-to)7883-7888
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number11
DOIs
Publication statusPublished - 2005 Nov 9

Fingerprint

rotating disks
Rotating disks
silicon films
Arsenic
Polysilicon
arsenic
Chemical vapor deposition
high speed
vapor deposition
Deposition rates
Flow rate
flow velocity
wafers
Silanes
Silicon wafers
Temperature
boundary layer thickness
Film thickness
electrical resistivity
Boundary layers

Keywords

  • Arsenic-doped
  • CVD
  • In-situ
  • Particle
  • Poly-Si
  • Rotating disk
  • Temperature
  • Uniformity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High-speed rotating-disk chemical vapor deposition process for in-situ arsenic-doped polycrystalline silicon films. / Terai, Fujio; Kobayashi, Hiroaki; Katsui, Shuji; Tamaoki, Naoki; Nagatomo, Takao; Homma, Tetsuya.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 11, 09.11.2005, p. 7883-7888.

Research output: Contribution to journalArticle

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