HIGH-SPEED STATIC FREQUENCY DIVIDER EMPLOYING N** plus -GE GATE ALGAAS/GAAS MISFETS.

Takashi Mizutani, Makoto Hirano, Shuichi Fujita, Koichi Maezawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

The high-speed potential of n** plus -Ge gate AlGaAs/GaAs MISFETs has been demonstrated by fabricating a divide-by-four static frequency divider. The transconductance of a MISFET with 0. 6- mu m gate length was 470 mS/mm. The small V//t//h standard deviation of 13 mV throughout the 2-in wafer confirms the principal advantage of the MISFET, namely high V//t//h uniformity. The frequency-divider circuit was based on source-coupled FET logic with 0. 9- mu m gate-length MISFET. A maximum toggle frequency as high as 16 GHz with a power dissipation of 36 mW per T-flip-flop has been achieved at room temperature. In addition, a cutoff frequency as high as 54 GHz has been achieved in a 0. 5 mu m gate length MISFET, which leads to an electron velocity in the channel as high as 1. 7 multiplied by 10**7 cm/s.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages603-606
Number of pages4
Publication statusPublished - 1987
Externally publishedYes

Fingerprint

Flip flop circuits
Cutoff frequency
Transconductance
Field effect transistors
Energy dissipation
Electrons
Networks (circuits)
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Mizutani, T., Hirano, M., Fujita, S., & Maezawa, K. (1987). HIGH-SPEED STATIC FREQUENCY DIVIDER EMPLOYING N** plus -GE GATE ALGAAS/GAAS MISFETS. In Technical Digest - International Electron Devices Meeting (pp. 603-606). IEEE.

HIGH-SPEED STATIC FREQUENCY DIVIDER EMPLOYING N** plus -GE GATE ALGAAS/GAAS MISFETS. / Mizutani, Takashi; Hirano, Makoto; Fujita, Shuichi; Maezawa, Koichi.

Technical Digest - International Electron Devices Meeting. IEEE, 1987. p. 603-606.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mizutani, T, Hirano, M, Fujita, S & Maezawa, K 1987, HIGH-SPEED STATIC FREQUENCY DIVIDER EMPLOYING N** plus -GE GATE ALGAAS/GAAS MISFETS. in Technical Digest - International Electron Devices Meeting. IEEE, pp. 603-606.
Mizutani T, Hirano M, Fujita S, Maezawa K. HIGH-SPEED STATIC FREQUENCY DIVIDER EMPLOYING N** plus -GE GATE ALGAAS/GAAS MISFETS. In Technical Digest - International Electron Devices Meeting. IEEE. 1987. p. 603-606
Mizutani, Takashi ; Hirano, Makoto ; Fujita, Shuichi ; Maezawa, Koichi. / HIGH-SPEED STATIC FREQUENCY DIVIDER EMPLOYING N** plus -GE GATE ALGAAS/GAAS MISFETS. Technical Digest - International Electron Devices Meeting. IEEE, 1987. pp. 603-606
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abstract = "The high-speed potential of n** plus -Ge gate AlGaAs/GaAs MISFETs has been demonstrated by fabricating a divide-by-four static frequency divider. The transconductance of a MISFET with 0. 6- mu m gate length was 470 mS/mm. The small V//t//h standard deviation of 13 mV throughout the 2-in wafer confirms the principal advantage of the MISFET, namely high V//t//h uniformity. The frequency-divider circuit was based on source-coupled FET logic with 0. 9- mu m gate-length MISFET. A maximum toggle frequency as high as 16 GHz with a power dissipation of 36 mW per T-flip-flop has been achieved at room temperature. In addition, a cutoff frequency as high as 54 GHz has been achieved in a 0. 5 mu m gate length MISFET, which leads to an electron velocity in the channel as high as 1. 7 multiplied by 10**7 cm/s.",
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