### Abstract

The high-speed potential of n** plus -Ge gate AlGaAs/GaAs MISFETs has been demonstrated by fabricating a divide-by-four static frequency divider. The transconductance of a MISFET with 0. 6- mu m gate length was 470 mS/mm. The small V//t//h standard deviation of 13 mV throughout the 2-in wafer confirms the principal advantage of the MISFET, namely high V//t//h uniformity. The frequency-divider circuit was based on source-coupled FET logic with 0. 9- mu m gate-length MISFET. A maximum toggle frequency as high as 16 GHz with a power dissipation of 36 mW per T-flip-flop has been achieved at room temperature. In addition, a cutoff frequency as high as 54 GHz has been achieved in a 0. 5 mu m gate length MISFET, which leads to an electron velocity in the channel as high as 1. 7 multiplied by 10**7 cm/s.

Original language | English |
---|---|

Title of host publication | Technical Digest - International Electron Devices Meeting |

Publisher | IEEE |

Pages | 603-606 |

Number of pages | 4 |

Publication status | Published - 1987 |

Externally published | Yes |

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### ASJC Scopus subject areas

- Electrical and Electronic Engineering

### Cite this

*Technical Digest - International Electron Devices Meeting*(pp. 603-606). IEEE.

**HIGH-SPEED STATIC FREQUENCY DIVIDER EMPLOYING N** plus -GE GATE ALGAAS/GAAS MISFETS.** / Mizutani, Takashi; Hirano, Makoto; Fujita, Shuichi; Maezawa, Koichi.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

*Technical Digest - International Electron Devices Meeting.*IEEE, pp. 603-606.

}

TY - GEN

T1 - HIGH-SPEED STATIC FREQUENCY DIVIDER EMPLOYING N** plus -GE GATE ALGAAS/GAAS MISFETS.

AU - Mizutani, Takashi

AU - Hirano, Makoto

AU - Fujita, Shuichi

AU - Maezawa, Koichi

PY - 1987

Y1 - 1987

N2 - The high-speed potential of n** plus -Ge gate AlGaAs/GaAs MISFETs has been demonstrated by fabricating a divide-by-four static frequency divider. The transconductance of a MISFET with 0. 6- mu m gate length was 470 mS/mm. The small V//t//h standard deviation of 13 mV throughout the 2-in wafer confirms the principal advantage of the MISFET, namely high V//t//h uniformity. The frequency-divider circuit was based on source-coupled FET logic with 0. 9- mu m gate-length MISFET. A maximum toggle frequency as high as 16 GHz with a power dissipation of 36 mW per T-flip-flop has been achieved at room temperature. In addition, a cutoff frequency as high as 54 GHz has been achieved in a 0. 5 mu m gate length MISFET, which leads to an electron velocity in the channel as high as 1. 7 multiplied by 10**7 cm/s.

AB - The high-speed potential of n** plus -Ge gate AlGaAs/GaAs MISFETs has been demonstrated by fabricating a divide-by-four static frequency divider. The transconductance of a MISFET with 0. 6- mu m gate length was 470 mS/mm. The small V//t//h standard deviation of 13 mV throughout the 2-in wafer confirms the principal advantage of the MISFET, namely high V//t//h uniformity. The frequency-divider circuit was based on source-coupled FET logic with 0. 9- mu m gate-length MISFET. A maximum toggle frequency as high as 16 GHz with a power dissipation of 36 mW per T-flip-flop has been achieved at room temperature. In addition, a cutoff frequency as high as 54 GHz has been achieved in a 0. 5 mu m gate length MISFET, which leads to an electron velocity in the channel as high as 1. 7 multiplied by 10**7 cm/s.

UR - http://www.scopus.com/inward/record.url?scp=0023575121&partnerID=8YFLogxK

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M3 - Conference contribution

SP - 603

EP - 606

BT - Technical Digest - International Electron Devices Meeting

PB - IEEE

ER -