High-Temperature Behaviors of GaN Schottky Barrier Diode

K. Nakamura, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)C-9-3
JournalDefault journal
Publication statusPublished - 1998 Sep 1

Cite this

Nakamura, K., Ishikawa, H., Egawa, T., Jimbo, T., & Umeno, M. (1998). High-Temperature Behaviors of GaN Schottky Barrier Diode. Default journal, C-9-3.