High-Temperature Behaviors of GaN Schottky Barrier Diode

K. Nakamura, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)C-9-3
JournalDefault journal
Publication statusPublished - 1998 Sep 1

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