High-Temperature Behaviors of GaN Schottky Barrier Diode

K. Nakamura, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)C-9-3
JournalDefault journal
Publication statusPublished - 1998 Sep 1

Cite this

Nakamura, K., Ishikawa, H., Egawa, T., Jimbo, T., & Umeno, M. (1998). High-Temperature Behaviors of GaN Schottky Barrier Diode. Default journal, C-9-3.

High-Temperature Behaviors of GaN Schottky Barrier Diode. / Nakamura, K.; Ishikawa, H.; Egawa, T.; Jimbo, T.; Umeno, M.

In: Default journal, 01.09.1998, p. C-9-3.

Research output: Contribution to journalArticle

Nakamura, K, Ishikawa, H, Egawa, T, Jimbo, T & Umeno, M 1998, 'High-Temperature Behaviors of GaN Schottky Barrier Diode', Default journal, pp. C-9-3.
Nakamura K, Ishikawa H, Egawa T, Jimbo T, Umeno M. High-Temperature Behaviors of GaN Schottky Barrier Diode. Default journal. 1998 Sep 1;C-9-3.
Nakamura, K. ; Ishikawa, H. ; Egawa, T. ; Jimbo, T. ; Umeno, M. / High-Temperature Behaviors of GaN Schottky Barrier Diode. In: Default journal. 1998 ; pp. C-9-3.
@article{2eb4e3ba18a94606ba76aa0645d2edaf,
title = "High-Temperature Behaviors of GaN Schottky Barrier Diode",
author = "K. Nakamura and H. Ishikawa and T. Egawa and T. Jimbo and M. Umeno",
year = "1998",
month = "9",
day = "1",
language = "English",
pages = "C--9--3",
journal = "Default journal",

}

TY - JOUR

T1 - High-Temperature Behaviors of GaN Schottky Barrier Diode

AU - Nakamura, K.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Jimbo, T.

AU - Umeno, M.

PY - 1998/9/1

Y1 - 1998/9/1

M3 - Article

SP - C-9-3

JO - Default journal

JF - Default journal

ER -