High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

S. Arulkumaran, T. Egawa, Hiroyasu Ishikawa, T. Jimbo

Research output: Contribution to journalArticle

75 Citations (Scopus)

Abstract

The high-electron-mobility transistors (HEMTs) have been demonstrated on both sapphire and semi-insulating (SI) SiC substrates, and the dc characteristics of the fabricated devices were examined at temperatures ranging from 25 to 500°C. The decrease in drain current and the transconductance with the increase of temperature have been observed. The decrease ratio of transconductance and drain current was similar for both the HEMTs on sapphire and SI-SiC substrates at and above 300°C. The HEMTs on SiC substrates showed better dc characteristics after being subjected to thermal stress up to 500°C. Although the SiC-based HEMTs showed better characteristics up to the temperature of 300°C, compared with the sapphire-based HEMTs, similar dc characteristics were observed on both at and above 300°C. For high-temperature applications (≥300°C), additional cooling arrangements are essential for both devices.

Original languageEnglish
Pages (from-to)2186-2188
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number12
DOIs
Publication statusPublished - 2002 Mar 25
Externally publishedYes

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high electron mobility transistors
temperature effects
sapphire
transconductance
thermal stresses
temperature
cooling

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates. / Arulkumaran, S.; Egawa, T.; Ishikawa, Hiroyasu; Jimbo, T.

In: Applied Physics Letters, Vol. 80, No. 12, 25.03.2002, p. 2186-2188.

Research output: Contribution to journalArticle

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