High-Temperature-Grown High-Quality Quaternary AlInGaN Quantum Well Structure for Ultraviolet Application

Y. Liu, T. Egawa, H. Ishikawa, H. Jiang, B. Zhang, M. Hao

Research output: Contribution to journal › Article

Original languageEnglish
JournalDefault journal
Publication statusPublished - 2004 May 1

Cite this

High-Temperature-Grown High-Quality Quaternary AlInGaN Quantum Well Structure for Ultraviolet Application. / Liu, Y.; Egawa, T.; Ishikawa, H.; Jiang, H.; Zhang, B.; Hao, M.

In: Default journal, 01.05.2004.

Research output: Contribution to journal › Article

Liu, Y, Egawa, T, Ishikawa, H, Jiang, H, Zhang, B & Hao, M 2004, 'High-Temperature-Grown High-Quality Quaternary AlInGaN Quantum Well Structure for Ultraviolet Application', Default journal.
Liu Y, Egawa T, Ishikawa H, Jiang H, Zhang B, Hao M. High-Temperature-Grown High-Quality Quaternary AlInGaN Quantum Well Structure for Ultraviolet Application. Default journal. 2004 May 1.
Liu, Y. ; Egawa, T. ; Ishikawa, H. ; Jiang, H. ; Zhang, B. ; Hao, M. / High-Temperature-Grown High-Quality Quaternary AlInGaN Quantum Well Structure for Ultraviolet Application. In: Default journal. 2004.
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AU - Zhang, B.

AU - Hao, M.

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