High-Temperature-Grown High-Quality Quaternary AlInGaN Quantum Well Structure for Ultraviolet Application

Y. Liu, T. Egawa, H. Ishikawa, H. Jiang, B. Zhang, M. Hao

Research output: Contribution to journalArticle

Original languageEnglish
JournalDefault journal
Publication statusPublished - 2004 May 1

Cite this

High-Temperature-Grown High-Quality Quaternary AlInGaN Quantum Well Structure for Ultraviolet Application. / Liu, Y.; Egawa, T.; Ishikawa, H.; Jiang, H.; Zhang, B.; Hao, M.

In: Default journal, 01.05.2004.

Research output: Contribution to journalArticle

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AU - Ishikawa, H.

AU - Jiang, H.

AU - Zhang, B.

AU - Hao, M.

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