High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission

Yang Liu, Takashi Egawa, Hiroyasu Ishikawa, Hao Jiang, Baijun Zhang, Maosheng Hao, Takashi Jimbo

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Photoluminescence (PL) studies were carried out on AlInGaN epilayers grown at different temperatures. An abnormal broad peak, which enhanced with the increase of Al incorporation, was observed below the band gap energy of AlInGaN in the 77 K PL measurement. We assigned it to the non-optimum growth temperature for aluminum containing alloys since such emission can be suppressed at higher growth temperature. Thus, high temperature (HT) was proposed for AlInGaN growth. The quality of HT-grown quaternary AlInGaN alloys was superior to that of low-temperature-grown ones, their structural and optical properties are comparable to that of GaN. In addition, incorporating indium is also helpful to suppress this abnormal emission, which maybe due to the indium localization effect. Finally, high performance AlInGaN MQWs structure had also been demonstrated at a higher growth temperature.

Original languageEnglish
Pages (from-to)159-164
Number of pages6
JournalJournal of Crystal Growth
Volume264
Issue number1-3
DOIs
Publication statusPublished - 2004 Mar 15
Externally publishedYes

Fingerprint

Epilayers
ultraviolet emission
Semiconductor quantum wells
Growth temperature
quantum wells
Indium
indium
Photoluminescence
photoluminescence
quaternary alloys
Temperature
temperature
heat resistant alloys
Aluminum
aluminum alloys
Structural properties
Energy gap
Optical properties
optical properties

Keywords

  • A3. Metalorganic chemical vapor deposition
  • B1. Nitride
  • B2. Semiconducting III-V materials
  • B2. Semiconducting quaternary alloys

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission. / Liu, Yang; Egawa, Takashi; Ishikawa, Hiroyasu; Jiang, Hao; Zhang, Baijun; Hao, Maosheng; Jimbo, Takashi.

In: Journal of Crystal Growth, Vol. 264, No. 1-3, 15.03.2004, p. 159-164.

Research output: Contribution to journalArticle

Liu, Yang ; Egawa, Takashi ; Ishikawa, Hiroyasu ; Jiang, Hao ; Zhang, Baijun ; Hao, Maosheng ; Jimbo, Takashi. / High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission. In: Journal of Crystal Growth. 2004 ; Vol. 264, No. 1-3. pp. 159-164.
@article{2b121d0101784f929530c14d804d5c34,
title = "High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission",
abstract = "Photoluminescence (PL) studies were carried out on AlInGaN epilayers grown at different temperatures. An abnormal broad peak, which enhanced with the increase of Al incorporation, was observed below the band gap energy of AlInGaN in the 77 K PL measurement. We assigned it to the non-optimum growth temperature for aluminum containing alloys since such emission can be suppressed at higher growth temperature. Thus, high temperature (HT) was proposed for AlInGaN growth. The quality of HT-grown quaternary AlInGaN alloys was superior to that of low-temperature-grown ones, their structural and optical properties are comparable to that of GaN. In addition, incorporating indium is also helpful to suppress this abnormal emission, which maybe due to the indium localization effect. Finally, high performance AlInGaN MQWs structure had also been demonstrated at a higher growth temperature.",
keywords = "A3. Metalorganic chemical vapor deposition, B1. Nitride, B2. Semiconducting III-V materials, B2. Semiconducting quaternary alloys",
author = "Yang Liu and Takashi Egawa and Hiroyasu Ishikawa and Hao Jiang and Baijun Zhang and Maosheng Hao and Takashi Jimbo",
year = "2004",
month = "3",
day = "15",
doi = "10.1016/j.jcrysgro.2004.01.012",
language = "English",
volume = "264",
pages = "159--164",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission

AU - Liu, Yang

AU - Egawa, Takashi

AU - Ishikawa, Hiroyasu

AU - Jiang, Hao

AU - Zhang, Baijun

AU - Hao, Maosheng

AU - Jimbo, Takashi

PY - 2004/3/15

Y1 - 2004/3/15

N2 - Photoluminescence (PL) studies were carried out on AlInGaN epilayers grown at different temperatures. An abnormal broad peak, which enhanced with the increase of Al incorporation, was observed below the band gap energy of AlInGaN in the 77 K PL measurement. We assigned it to the non-optimum growth temperature for aluminum containing alloys since such emission can be suppressed at higher growth temperature. Thus, high temperature (HT) was proposed for AlInGaN growth. The quality of HT-grown quaternary AlInGaN alloys was superior to that of low-temperature-grown ones, their structural and optical properties are comparable to that of GaN. In addition, incorporating indium is also helpful to suppress this abnormal emission, which maybe due to the indium localization effect. Finally, high performance AlInGaN MQWs structure had also been demonstrated at a higher growth temperature.

AB - Photoluminescence (PL) studies were carried out on AlInGaN epilayers grown at different temperatures. An abnormal broad peak, which enhanced with the increase of Al incorporation, was observed below the band gap energy of AlInGaN in the 77 K PL measurement. We assigned it to the non-optimum growth temperature for aluminum containing alloys since such emission can be suppressed at higher growth temperature. Thus, high temperature (HT) was proposed for AlInGaN growth. The quality of HT-grown quaternary AlInGaN alloys was superior to that of low-temperature-grown ones, their structural and optical properties are comparable to that of GaN. In addition, incorporating indium is also helpful to suppress this abnormal emission, which maybe due to the indium localization effect. Finally, high performance AlInGaN MQWs structure had also been demonstrated at a higher growth temperature.

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Nitride

KW - B2. Semiconducting III-V materials

KW - B2. Semiconducting quaternary alloys

UR - http://www.scopus.com/inward/record.url?scp=1342327990&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1342327990&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.01.012

DO - 10.1016/j.jcrysgro.2004.01.012

M3 - Article

AN - SCOPUS:1342327990

VL - 264

SP - 159

EP - 164

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-3

ER -