High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission

Yang Liu, Takashi Egawa, Hiroyasu Ishikawa, Hao Jiang, Baijun Zhang, Maosheng Hao, Takashi Jimbo

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Photoluminescence (PL) studies were carried out on AlInGaN epilayers grown at different temperatures. An abnormal broad peak, which enhanced with the increase of Al incorporation, was observed below the band gap energy of AlInGaN in the 77 K PL measurement. We assigned it to the non-optimum growth temperature for aluminum containing alloys since such emission can be suppressed at higher growth temperature. Thus, high temperature (HT) was proposed for AlInGaN growth. The quality of HT-grown quaternary AlInGaN alloys was superior to that of low-temperature-grown ones, their structural and optical properties are comparable to that of GaN. In addition, incorporating indium is also helpful to suppress this abnormal emission, which maybe due to the indium localization effect. Finally, high performance AlInGaN MQWs structure had also been demonstrated at a higher growth temperature.

Original languageEnglish
Pages (from-to)159-164
Number of pages6
JournalJournal of Crystal Growth
Volume264
Issue number1-3
DOIs
Publication statusPublished - 2004 Mar 15
Externally publishedYes

Keywords

  • A3. Metalorganic chemical vapor deposition
  • B1. Nitride
  • B2. Semiconducting III-V materials
  • B2. Semiconducting quaternary alloys

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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