High temperature oxidation of sic powder in oxidizing atmosphere containing water vapor

Takaya Akashi; Miho Kasajima; Chiharu Muraoka; Hajime Kiyono

doi:10.4028/3-908454-00-X.197

High temperature oxidation of sic powder in oxidizing atmosphere containing water vapor

Takaya Akashi, Miho Kasajima, Chiharu Muraoka, Hajime Kiyono

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Oxidation of SiC powder was studied at 1373 K to 1873 K in Ar-O ₂, Ar-H₂O, and Ar-O₂-H₂O using thermogravimetry. At 1373 K to 1573K, the weight gain increased with increasing water vapor pressure. The oxidation rate was evaluated on the basis of the Ginstering-Brounshtein kinetic model. In this temperature region, the apparent activation energy for the oxidation was almost the same (139-191 kJmol ^-1) independent of the atmosphere, suggesting that the same oxidation process proceeds. On the other hand, at temperatures >1673 K, the weight gain in the dry O₂ (Ar-O₂) was greater than that in the wet and wet O₂ (Ar-H₂O and Ar-O₂-H ₂O). The apparent activation energy in the dry O₂ (442 kJmol^-1) was much greater than that in the wet and wet O₂. We propose that water molecule diffused in silica layer in the wet and wet O₂ atmosphere at 1373 K to 1873 K.

Original language	English
Pages (from-to)	197-200
Number of pages	4
Journal	Key Engineering Materials
Volume	403
DOIs	https://doi.org/10.4028/3-908454-00-X.197
Publication status	Published - 2009 Feb 2
Externally published	Yes

Keywords

Diffusion kinetics
Oxidation
Silicon carbide
Thermogravimetry
Water vapor

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.4028/3-908454-00-X.197

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title = "High temperature oxidation of sic powder in oxidizing atmosphere containing water vapor",

abstract = "Oxidation of SiC powder was studied at 1373 K to 1873 K in Ar-O 2, Ar-H2O, and Ar-O2-H2O using thermogravimetry. At 1373 K to 1573K, the weight gain increased with increasing water vapor pressure. The oxidation rate was evaluated on the basis of the Ginstering-Brounshtein kinetic model. In this temperature region, the apparent activation energy for the oxidation was almost the same (139-191 kJmol -1) independent of the atmosphere, suggesting that the same oxidation process proceeds. On the other hand, at temperatures >1673 K, the weight gain in the dry O2 (Ar-O2) was greater than that in the wet and wet O2 (Ar-H2O and Ar-O2-H 2O). The apparent activation energy in the dry O2 (442 kJmol-1) was much greater than that in the wet and wet O2. We propose that water molecule diffused in silica layer in the wet and wet O2 atmosphere at 1373 K to 1873 K.",

keywords = "Diffusion kinetics, Oxidation, Silicon carbide, Thermogravimetry, Water vapor",

author = "Takaya Akashi and Miho Kasajima and Chiharu Muraoka and Hajime Kiyono",

year = "2009",

month = feb,

day = "2",

doi = "10.4028/3-908454-00-X.197",

language = "English",

volume = "403",

pages = "197--200",

journal = "Key Engineering Materials",

issn = "1013-9826",

publisher = "Trans Tech Publications",

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TY - JOUR

T1 - High temperature oxidation of sic powder in oxidizing atmosphere containing water vapor

AU - Akashi, Takaya

AU - Kasajima, Miho

AU - Muraoka, Chiharu

AU - Kiyono, Hajime

PY - 2009/2/2

Y1 - 2009/2/2

N2 - Oxidation of SiC powder was studied at 1373 K to 1873 K in Ar-O 2, Ar-H2O, and Ar-O2-H2O using thermogravimetry. At 1373 K to 1573K, the weight gain increased with increasing water vapor pressure. The oxidation rate was evaluated on the basis of the Ginstering-Brounshtein kinetic model. In this temperature region, the apparent activation energy for the oxidation was almost the same (139-191 kJmol -1) independent of the atmosphere, suggesting that the same oxidation process proceeds. On the other hand, at temperatures >1673 K, the weight gain in the dry O2 (Ar-O2) was greater than that in the wet and wet O2 (Ar-H2O and Ar-O2-H 2O). The apparent activation energy in the dry O2 (442 kJmol-1) was much greater than that in the wet and wet O2. We propose that water molecule diffused in silica layer in the wet and wet O2 atmosphere at 1373 K to 1873 K.

AB - Oxidation of SiC powder was studied at 1373 K to 1873 K in Ar-O 2, Ar-H2O, and Ar-O2-H2O using thermogravimetry. At 1373 K to 1573K, the weight gain increased with increasing water vapor pressure. The oxidation rate was evaluated on the basis of the Ginstering-Brounshtein kinetic model. In this temperature region, the apparent activation energy for the oxidation was almost the same (139-191 kJmol -1) independent of the atmosphere, suggesting that the same oxidation process proceeds. On the other hand, at temperatures >1673 K, the weight gain in the dry O2 (Ar-O2) was greater than that in the wet and wet O2 (Ar-H2O and Ar-O2-H 2O). The apparent activation energy in the dry O2 (442 kJmol-1) was much greater than that in the wet and wet O2. We propose that water molecule diffused in silica layer in the wet and wet O2 atmosphere at 1373 K to 1873 K.

KW - Diffusion kinetics

KW - Oxidation

KW - Silicon carbide

KW - Thermogravimetry

KW - Water vapor

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JO - Key Engineering Materials

JF - Key Engineering Materials

ER -

High temperature oxidation of sic powder in oxidizing atmosphere containing water vapor

Abstract

Keywords

ASJC Scopus subject areas

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