High temperature oxidation of sic powder in oxidizing atmosphere containing water vapor

Takaya Akashi, Miho Kasajima, Chiharu Muraoka, Hajime Kiyono

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1 Citation (Scopus)


Oxidation of SiC powder was studied at 1373 K to 1873 K in Ar-O 2, Ar-H2O, and Ar-O2-H2O using thermogravimetry. At 1373 K to 1573K, the weight gain increased with increasing water vapor pressure. The oxidation rate was evaluated on the basis of the Ginstering-Brounshtein kinetic model. In this temperature region, the apparent activation energy for the oxidation was almost the same (139-191 kJmol -1) independent of the atmosphere, suggesting that the same oxidation process proceeds. On the other hand, at temperatures >1673 K, the weight gain in the dry O2 (Ar-O2) was greater than that in the wet and wet O2 (Ar-H2O and Ar-O2-H 2O). The apparent activation energy in the dry O2 (442 kJmol-1) was much greater than that in the wet and wet O2. We propose that water molecule diffused in silica layer in the wet and wet O2 atmosphere at 1373 K to 1873 K.

Original languageEnglish
Pages (from-to)197-200
Number of pages4
JournalKey Engineering Materials
Publication statusPublished - 2009 Feb 2



  • Diffusion kinetics
  • Oxidation
  • Silicon carbide
  • Thermogravimetry
  • Water vapor

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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