High Trans-conductance AlGaN/GaN-HEMT with Recessed Gate on Sapphire Substrate

H. Okita, K. Kaifu, J. Mita, T. Yamada, Y. Sano, H. Ishikawa, T. Egawa, T. Jimbo

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)Tu-A3.4
JournalDefault journal
Publication statusPublished - 2003 May 1

Cite this

Okita, H., Kaifu, K., Mita, J., Yamada, T., Sano, Y., Ishikawa, H., ... Jimbo, T. (2003). High Trans-conductance AlGaN/GaN-HEMT with Recessed Gate on Sapphire Substrate. Default journal, Tu-A3.4.

High Trans-conductance AlGaN/GaN-HEMT with Recessed Gate on Sapphire Substrate. / Okita, H.; Kaifu, K.; Mita, J.; Yamada, T.; Sano, Y.; Ishikawa, H.; Egawa, T.; Jimbo, T.

In: Default journal, 01.05.2003, p. Tu-A3.4.

Research output: Contribution to journalArticle

Okita, H, Kaifu, K, Mita, J, Yamada, T, Sano, Y, Ishikawa, H, Egawa, T & Jimbo, T 2003, 'High Trans-conductance AlGaN/GaN-HEMT with Recessed Gate on Sapphire Substrate', Default journal, pp. Tu-A3.4.
Okita H, Kaifu K, Mita J, Yamada T, Sano Y, Ishikawa H et al. High Trans-conductance AlGaN/GaN-HEMT with Recessed Gate on Sapphire Substrate. Default journal. 2003 May 1;Tu-A3.4.
Okita, H. ; Kaifu, K. ; Mita, J. ; Yamada, T. ; Sano, Y. ; Ishikawa, H. ; Egawa, T. ; Jimbo, T. / High Trans-conductance AlGaN/GaN-HEMT with Recessed Gate on Sapphire Substrate. In: Default journal. 2003 ; pp. Tu-A3.4.
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AU - Yamada, T.

AU - Sano, Y.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Jimbo, T.

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