High Trans-conductance AlGaN/GaN-HEMT with Recessed Gate on Sapphire Substrate

H. Okita, K. Kaifu, J. Mita, T. Yamada, Y. Sano, H. Ishikawa, T. Egawa, T. Jimbo

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)Tu-A3.4
JournalDefault journal
Publication statusPublished - 2003 May 1

Cite this

Okita, H., Kaifu, K., Mita, J., Yamada, T., Sano, Y., Ishikawa, H., Egawa, T., & Jimbo, T. (2003). High Trans-conductance AlGaN/GaN-HEMT with Recessed Gate on Sapphire Substrate. Default journal, Tu-A3.4.