High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

Hideyuki Okita, Katsuaki Kaifu, Juro Mita, Tomoyuki Yamada, Yoshiaki Sano, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Recessed gate AlGaN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate have been fabricated. In order to improve FET performances, we optimized the layer structure and the electrode arrangement of the HEMT, and hence 0.15 μm gate-length AlGaN/GaN-HEMTs with recessed gate were successfully fabricated and the obtained transconductance was as high as 450 mS/mm. In this paper we describe the improvement of HEMT layer structures on sapphire substrate, the optimisation of an offset arrangement of gate electrodes, and the results of DC/RF measurements of our HEMTs.

Original languageEnglish
Pages (from-to)187-190
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume200
Issue number1
DOIs
Publication statusPublished - 2003 Nov 1

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this