TY - JOUR
T1 - High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate
AU - Okita, Hideyuki
AU - Kaifu, Katsuaki
AU - Mita, Juro
AU - Yamada, Tomoyuki
AU - Sano, Yoshiaki
AU - Ishikawa, Hiroyasu
AU - Egawa, Takashi
AU - Jimbo, Takashi
PY - 2003/11
Y1 - 2003/11
N2 - Recessed gate AlGaN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate have been fabricated. In order to improve FET performances, we optimized the layer structure and the electrode arrangement of the HEMT, and hence 0.15 μm gate-length AlGaN/GaN-HEMTs with recessed gate were successfully fabricated and the obtained transconductance was as high as 450 mS/mm. In this paper we describe the improvement of HEMT layer structures on sapphire substrate, the optimisation of an offset arrangement of gate electrodes, and the results of DC/RF measurements of our HEMTs.
AB - Recessed gate AlGaN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate have been fabricated. In order to improve FET performances, we optimized the layer structure and the electrode arrangement of the HEMT, and hence 0.15 μm gate-length AlGaN/GaN-HEMTs with recessed gate were successfully fabricated and the obtained transconductance was as high as 450 mS/mm. In this paper we describe the improvement of HEMT layer structures on sapphire substrate, the optimisation of an offset arrangement of gate electrodes, and the results of DC/RF measurements of our HEMTs.
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U2 - 10.1002/pssa.200303537
DO - 10.1002/pssa.200303537
M3 - Article
AN - SCOPUS:0348146361
SN - 0031-8965
VL - 200
SP - 187
EP - 190
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
IS - 1
ER -