High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

Hideyuki Okita, Katsuaki Kaifu, Juro Mita, Tomoyuki Yamada, Yoshiaki Sano, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Fingerprint

Dive into the research topics of 'High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy

Chemical Compounds