High-transconductance AlGaN/GaN high-electron-mobility transistors on semi-insulating silicon carbide substrate

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo

Research output: Contribution to journalLetter

11 Citations (Scopus)

Abstract

Epitaxial layers of AlGaN/GaN were grown on semi-insulating (SI) silicon carbide (SiC) by metalorganic chemical vapor deposition (MOCVD) with a very high electron sheet carrier density ns = 1.2 × 1013 cm-2 and a Hall carrier mobility as high as μH = 1281 cm2/Vs at room temperature. High-electron-mobility transistors (HEMTs) have been demonstrated using an AlGaN/GaN heterostructure on a SI-SiC substrate. The fabricated 2.2-μm-gate-length Al0.26Ga0.74N/GaN HEMTs exhibited extrinsic transconductance as high as 287 mS/mm with drain-source current density as high as 857 mA/mm. This is the first report of such high transconductance achieved so far for 2.2-μm-gate-length Al0.26Ga0.74N/GaN HEMTs on SI-SiC substrates. A very small percentage (3%) of drain-source current density reduction at the gate voltage of +1.5 V has been observed for HEMTs on SI-SiC substrates. The observation of high extrinsic transconductance can be explained with the help of intrinsic transconductance values.

Original languageEnglish
Pages (from-to)L1081-L1083
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number10 B
DOIs
Publication statusPublished - 2001 Oct 15
Externally publishedYes

Keywords

  • AlGaN/GaN
  • High-electron-mobility transistor
  • MOCVD
  • Silicon carbide
  • Transconductance

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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