High-transconductance AlGaN/GaN high-electron-mobility transistors on semi-insulating silicon carbide substrate

S. Arulkumaran, T. Egawa, Hiroyasu Ishikawa, T. Jimbo

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Epitaxial layers of AlGaN/GaN were grown on semi-insulating (SI) silicon carbide (SiC) by metalorganic chemical vapor deposition (MOCVD) with a very high electron sheet carrier density ns = 1.2 × 1013 cm-2 and a Hall carrier mobility as high as μH = 1281 cm2/Vs at room temperature. High-electron-mobility transistors (HEMTs) have been demonstrated using an AlGaN/GaN heterostructure on a SI-SiC substrate. The fabricated 2.2-μm-gate-length Al0.26Ga0.74N/GaN HEMTs exhibited extrinsic transconductance as high as 287 mS/mm with drain-source current density as high as 857 mA/mm. This is the first report of such high transconductance achieved so far for 2.2-μm-gate-length Al0.26Ga0.74N/GaN HEMTs on SI-SiC substrates. A very small percentage (3%) of drain-source current density reduction at the gate voltage of +1.5 V has been observed for HEMTs on SI-SiC substrates. The observation of high extrinsic transconductance can be explained with the help of intrinsic transconductance values.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number10 B
Publication statusPublished - 2001 Oct 15
Externally publishedYes

Fingerprint

Transconductance
High electron mobility transistors
transconductance
high electron mobility transistors
Silicon carbide
silicon carbides
Substrates
Current density
current density
Carrier mobility
Epitaxial layers
Metallorganic chemical vapor deposition
carrier mobility
metalorganic chemical vapor deposition
Carrier concentration
Heterojunctions
Electrons
Electric potential
electric potential
room temperature

Keywords

  • AlGaN/GaN
  • High-electron-mobility transistor
  • MOCVD
  • Silicon carbide
  • Transconductance

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High-transconductance AlGaN/GaN high-electron-mobility transistors on semi-insulating silicon carbide substrate. / Arulkumaran, S.; Egawa, T.; Ishikawa, Hiroyasu; Jimbo, T.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 40, No. 10 B, 15.10.2001.

Research output: Contribution to journalArticle

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