HIGH TRANSCONDUCTANCE GaAs MESFET WITH REDUCED SHORT CHANNEL EFFECT CHARACTERISTICS.

Kazuyoshi Ueno, Takashi Furutsuka, Hideo Toyoshima, Mikio Kanamori, Asamitsu Higashisaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

A high g//m , 375 mS/mm (V//t //h equals -0. 09 V), has been achieved from a 0. 3- mu m long gate GaAs MESFET with a very small short channel effect by using an MBE grown channel layer. The maximum K-value obtained was 410 mS/Vmm, which is the highest ever reported for GaAs MESFETs. A technology combining sidewall-assisted self-alignment technology (SWAT) and refractory metal gate n** plus selective ion implantation was successfully applied to the fabrication of a GaAs MESFET with MBE grown channel layer, resulting in a very low source series resistance of 0. 3 OMEGA mm. FET characteristic dependences on gate length were also compared for FETs with different doping concentrations. The highly doped channel turned out to be effective in reducing the short-channel effects and improving the FET load drivability.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages82-85
Number of pages4
Publication statusPublished - 1985
Externally publishedYes

Fingerprint

Field effect transistors
Molecular beam epitaxy
Gates (transistor)
Refractory metals
Ion implantation
Doping (additives)
Fabrication

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ueno, K., Furutsuka, T., Toyoshima, H., Kanamori, M., & Higashisaka, A. (1985). HIGH TRANSCONDUCTANCE GaAs MESFET WITH REDUCED SHORT CHANNEL EFFECT CHARACTERISTICS. In Technical Digest - International Electron Devices Meeting (pp. 82-85). IEEE.

HIGH TRANSCONDUCTANCE GaAs MESFET WITH REDUCED SHORT CHANNEL EFFECT CHARACTERISTICS. / Ueno, Kazuyoshi; Furutsuka, Takashi; Toyoshima, Hideo; Kanamori, Mikio; Higashisaka, Asamitsu.

Technical Digest - International Electron Devices Meeting. IEEE, 1985. p. 82-85.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ueno, K, Furutsuka, T, Toyoshima, H, Kanamori, M & Higashisaka, A 1985, HIGH TRANSCONDUCTANCE GaAs MESFET WITH REDUCED SHORT CHANNEL EFFECT CHARACTERISTICS. in Technical Digest - International Electron Devices Meeting. IEEE, pp. 82-85.
Ueno K, Furutsuka T, Toyoshima H, Kanamori M, Higashisaka A. HIGH TRANSCONDUCTANCE GaAs MESFET WITH REDUCED SHORT CHANNEL EFFECT CHARACTERISTICS. In Technical Digest - International Electron Devices Meeting. IEEE. 1985. p. 82-85
Ueno, Kazuyoshi ; Furutsuka, Takashi ; Toyoshima, Hideo ; Kanamori, Mikio ; Higashisaka, Asamitsu. / HIGH TRANSCONDUCTANCE GaAs MESFET WITH REDUCED SHORT CHANNEL EFFECT CHARACTERISTICS. Technical Digest - International Electron Devices Meeting. IEEE, 1985. pp. 82-85
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