HIGH TRANSCONDUCTANCE GaAs MESFETs FABRICATED USING SIDEWALL-ASSISTED SELF-ALIGNMENT TECHNOLOGY (SWAT).

K. Ueno, T. Furutsuka, M. Kanamori, A. Higashisaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)
Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherJapan Soc of Applied Physics
Pages405-408
Number of pages4
ISBN (Print)4930813107, 9784930813107
DOIs
Publication statusPublished - 1985
Externally publishedYes

Publication series

NameConference on Solid State Devices and Materials

ASJC Scopus subject areas

  • Engineering(all)

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