HIGH TRANSCONDUCTANCE GaAs MESFETs FABRICATED USING SIDEWALL-ASSISTED SELF-ALIGNMENT TECHNOLOGY (SWAT).

K. Ueno, T. Furutsuka, M. Kanamori, A. Higashisaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

A high transconductance of 602 mS/mm has been obtained in 0. 3 micrometer-long gate GaAs MESFETs using a combined sidewall-assisted self-alignment technology and WSi//x gate n** plus selective ion implantation technology. The gate orientation effect for the fabricated FET is enhanced by lateral diffusion of implanted n** plus impurities to the channel region. 25-stage ring oscillators with an E/D DCFL configuration were also fabricated using 0. 7 micrometer-long gate FETs. The minimum propagation delay time of 16 ps/gate was observed.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherJapan Soc of Applied Physics
Pages405-408
Number of pages4
ISBN (Print)4930813107
Publication statusPublished - 1985 Dec 1

Publication series

NameConference on Solid State Devices and Materials

ASJC Scopus subject areas

  • Engineering(all)

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    Ueno, K., Furutsuka, T., Kanamori, M., & Higashisaka, A. (1985). HIGH TRANSCONDUCTANCE GaAs MESFETs FABRICATED USING SIDEWALL-ASSISTED SELF-ALIGNMENT TECHNOLOGY (SWAT). In Conference on Solid State Devices and Materials (pp. 405-408). (Conference on Solid State Devices and Materials). Japan Soc of Applied Physics.