HIGH TRANSCONDUCTANCE GaAs MESFETs FABRICATED USING SIDEWALL-ASSISTED SELF-ALIGNMENT TECHNOLOGY (SWAT).

K. Ueno, T. Furutsuka, M. Kanamori, A. Higashisaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)
Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherJapan Soc of Applied Physics
Pages405-408
Number of pages4
ISBN (Print)4930813107, 9784930813107
DOIs
Publication statusPublished - 1985
Externally publishedYes

Publication series

NameConference on Solid State Devices and Materials

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'HIGH TRANSCONDUCTANCE GaAs MESFETs FABRICATED USING SIDEWALL-ASSISTED SELF-ALIGNMENT TECHNOLOGY (SWAT).'. Together they form a unique fingerprint.

  • Cite this

    Ueno, K., Furutsuka, T., Kanamori, M., & Higashisaka, A. (1985). HIGH TRANSCONDUCTANCE GaAs MESFETs FABRICATED USING SIDEWALL-ASSISTED SELF-ALIGNMENT TECHNOLOGY (SWAT). In Conference on Solid State Devices and Materials (pp. 405-408). (Conference on Solid State Devices and Materials). Japan Soc of Applied Physics. https://doi.org/10.7567/ssdm.1985.b-5-2