High transconductance GaAs MESFETs fabricated using sidewall-assisted self-alignment technology (SWAT)

K.Ueno K.Ueno, T.Furutuka T.Furutuka, M.Kanamori M.Kanamori, A.Higashisaka A.Higashisaka, Kazuyoshi Ueno

Research output: Contribution to journalArticle

4 Citations (Scopus)
Original languageEnglish
Pages (from-to)405-408
JournalExtended Abstracts of Solid State Devices and Materials
Publication statusPublished - 1985 Aug 1

Cite this

High transconductance GaAs MESFETs fabricated using sidewall-assisted self-alignment technology (SWAT). / K.Ueno, K.Ueno; T.Furutuka, T.Furutuka; M.Kanamori, M.Kanamori; A.Higashisaka, A.Higashisaka; Ueno, Kazuyoshi.

In: Extended Abstracts of Solid State Devices and Materials, 01.08.1985, p. 405-408.

Research output: Contribution to journalArticle

K.Ueno, K.Ueno ; T.Furutuka, T.Furutuka ; M.Kanamori, M.Kanamori ; A.Higashisaka, A.Higashisaka ; Ueno, Kazuyoshi. / High transconductance GaAs MESFETs fabricated using sidewall-assisted self-alignment technology (SWAT). In: Extended Abstracts of Solid State Devices and Materials. 1985 ; pp. 405-408.
@article{19b3f6846d114968b009aa472b1e0bf2,
title = "High transconductance GaAs MESFETs fabricated using sidewall-assisted self-alignment technology (SWAT)",
author = "K.Ueno K.Ueno and T.Furutuka T.Furutuka and M.Kanamori M.Kanamori and A.Higashisaka A.Higashisaka and Kazuyoshi Ueno",
year = "1985",
month = "8",
day = "1",
language = "English",
pages = "405--408",
journal = "Extended Abstracts of Solid State Devices and Materials",

}

TY - JOUR

T1 - High transconductance GaAs MESFETs fabricated using sidewall-assisted self-alignment technology (SWAT)

AU - K.Ueno, K.Ueno

AU - T.Furutuka, T.Furutuka

AU - M.Kanamori, M.Kanamori

AU - A.Higashisaka, A.Higashisaka

AU - Ueno, Kazuyoshi

PY - 1985/8/1

Y1 - 1985/8/1

M3 - Article

SP - 405

EP - 408

JO - Extended Abstracts of Solid State Devices and Materials

JF - Extended Abstracts of Solid State Devices and Materials

ER -