High transconductance GaAs MESFETs fabricated using sidewall-assisted self-alignment technology (SWAT)

K.Ueno K.Ueno, T.Furutuka T.Furutuka, M.Kanamori M.Kanamori, A.Higashisaka A.Higashisaka, Kazuyoshi Ueno

Research output: Contribution to journalArticle

4 Citations (Scopus)
Original languageEnglish
Pages (from-to)405-408
JournalExtended Abstracts of Solid State Devices and Materials
Publication statusPublished - 1985 Aug 1

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