High-Transconductance p-Channel Modulation-Doped AlGaAs/GaAs Heterostructure FETs

Makoto Hirano

    Research output: Contribution to journalArticle

    11 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)620-624
    JournalIEEE Trans.Electron Devices
    VolumeED-33
    Publication statusPublished - 1986 May 1

    Cite this

    High-Transconductance p-Channel Modulation-Doped AlGaAs/GaAs Heterostructure FETs. / Hirano, Makoto.

    In: IEEE Trans.Electron Devices, Vol. ED-33, 01.05.1986, p. 620-624.

    Research output: Contribution to journalArticle

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    title = "High-Transconductance p-Channel Modulation-Doped AlGaAs/GaAs Heterostructure FETs",
    author = "Makoto Hirano",
    year = "1986",
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    pages = "620--624",
    journal = "IEEE Trans.Electron Devices",

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    AU - Hirano, Makoto

    PY - 1986/5/1

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    M3 - Article

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    JO - IEEE Trans.Electron Devices

    JF - IEEE Trans.Electron Devices

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