| Original language | English |
|---|---|
| Pages (from-to) | 620-624 |
| Journal | IEEE Trans．Electron Devices |
| Volume | ED-33 |
| Publication status | Published - 1986 May 1 |
High-Transconductance p-Channel Modulation-Doped AlGaAs/GaAs Heterostructure FETs
Makoto Hirano
Research output: Contribution to journal › Article › peer-review
11
Citations
(Scopus)