Higher-k LaYOx films with strong moisture-robustness

Yi Zhao, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The permittivities and the resistance to moisture of LaYOx (LYO) films annealed at 600°C with different Y concentrations are investigated. The permittivities of 40%Y-LYO film and 70%Y-LYO film are higher than 25. The high permittivities come from the well crystallized hexagonal phase of LYO films. For rare earth oxides, the hexagonal phase shows higher permittivity than the cubic phase due to the smaller molar volume of the hexagonal phase. Furthermore, the high permittivity LYO films (40%Y-LYO and 70%Y-LYO) show strong resistance to the moisture due to the introduction Of Y2O 3 which owns stronger resistance to the moisture than La 2O3.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages427-429
Number of pages3
ISBN (Print)1424401615, 9781424401611
DOIs
Publication statusPublished - 2006 Jan 1
Externally publishedYes
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 2006 Oct 232006 Oct 26

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

ConferenceICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period06/10/2306/10/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Zhao, Y., Kita, K., Kyuno, K., & Toriumi, A. (2006). Higher-k LaYOx films with strong moisture-robustness. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 427-429). [4098126] (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306291