Higher thermal cycling reliability of power semiconductor module for power converters

Akira Morozumi, H. Hokazono, Yoshitaka Nishimura, Yoshiharu Kariya, Eiji Mochizuki, Yoshikazu Takahashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Power semiconductor devices for electric power conversion must be highly efficient, compact, and with large capacity. Therefore, highly thermo stability and long fatigue lifetime are necessary for the joint materials of these devices. In this paper, we discuss the joint reliability obtained by applying the supersaturated Sn-13wt. % Sb binary alloy. Through this process, the joint materials achieve a thermo stable up to 175 °C or more. Thus, they can be used in wide-bandgap semiconductors to join the ceramic substrate with the heat sink. Finally, we examine the new material properties (tensile and low cycling fatigue). The thermal cycling lifetime of supersaturated Sn-Sb joints is significantly affected by the material's microstructure; when its crystal grains are large, the material has a longer lifetime. Consequently, in SbSn compounds, which crystallize in the β-Sn matrix, solder crack propagation can be prevented when the compound is large enough; there is a mechanism that suppresses the propagation speed of the crack. In addition, the supersaturated Sn-13wt. %Sb binary alloy is also resistant up to 150 °C, above the higher temperature at which the joints are exposed to. Therefore, this application can ensure high reliability for the high temperature operating devices, which operate at 175 °C temperature or higher.

Original languageEnglish
Title of host publication2016 International Conference on Electronics Packaging, ICEP 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages405-410
Number of pages6
ISBN (Electronic)9784904090176
DOIs
Publication statusPublished - 2016 Jun 7
Event2016 International Conference on Electronics Packaging, ICEP 2016 - Hokkaido, Japan
Duration: 2016 Apr 202016 Apr 22

Other

Other2016 International Conference on Electronics Packaging, ICEP 2016
CountryJapan
CityHokkaido
Period16/4/2016/4/22

Fingerprint

Power converters
Thermal cycling
Semiconductor materials
Binary alloys
Fatigue of materials
Heat sinks
Soldering alloys
Temperature
Crack propagation
Materials properties
Energy gap
Cracks
Crystals
Microstructure
Substrates

Keywords

  • Crack propagation
  • Sn-Sb binary alloy
  • Solidification rate
  • Strengthening mechanism
  • Thermal cycling test
  • Thermal stress
  • Wide-bandgap semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Mechanics of Materials

Cite this

Morozumi, A., Hokazono, H., Nishimura, Y., Kariya, Y., Mochizuki, E., & Takahashi, Y. (2016). Higher thermal cycling reliability of power semiconductor module for power converters. In 2016 International Conference on Electronics Packaging, ICEP 2016 (pp. 405-410). [7486857] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEP.2016.7486857

Higher thermal cycling reliability of power semiconductor module for power converters. / Morozumi, Akira; Hokazono, H.; Nishimura, Yoshitaka; Kariya, Yoshiharu; Mochizuki, Eiji; Takahashi, Yoshikazu.

2016 International Conference on Electronics Packaging, ICEP 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 405-410 7486857.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Morozumi, A, Hokazono, H, Nishimura, Y, Kariya, Y, Mochizuki, E & Takahashi, Y 2016, Higher thermal cycling reliability of power semiconductor module for power converters. in 2016 International Conference on Electronics Packaging, ICEP 2016., 7486857, Institute of Electrical and Electronics Engineers Inc., pp. 405-410, 2016 International Conference on Electronics Packaging, ICEP 2016, Hokkaido, Japan, 16/4/20. https://doi.org/10.1109/ICEP.2016.7486857
Morozumi A, Hokazono H, Nishimura Y, Kariya Y, Mochizuki E, Takahashi Y. Higher thermal cycling reliability of power semiconductor module for power converters. In 2016 International Conference on Electronics Packaging, ICEP 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 405-410. 7486857 https://doi.org/10.1109/ICEP.2016.7486857
Morozumi, Akira ; Hokazono, H. ; Nishimura, Yoshitaka ; Kariya, Yoshiharu ; Mochizuki, Eiji ; Takahashi, Yoshikazu. / Higher thermal cycling reliability of power semiconductor module for power converters. 2016 International Conference on Electronics Packaging, ICEP 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 405-410
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