Highly c-axis aligned GaN thin film grown on Si using GaP intermediate layer by metalorganic chemical vapor deposition

H. Ishikawa, T. Soga, T. Nagatomo, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)We-P31
JournalDefault journal
Publication statusPublished - 1996 Mar 1

Cite this

Highly c-axis aligned GaN thin film grown on Si using GaP intermediate layer by metalorganic chemical vapor deposition. / Ishikawa, H.; Soga, T.; Nagatomo, T.; Jimbo, T.; Umeno, M.

In: Default journal, 01.03.1996, p. We-P31.

Research output: Contribution to journalArticle

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title = "Highly c-axis aligned GaN thin film grown on Si using GaP intermediate layer by metalorganic chemical vapor deposition",
author = "H. Ishikawa and T. Soga and T. Nagatomo and T. Jimbo and M. Umeno",
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TY - JOUR

T1 - Highly c-axis aligned GaN thin film grown on Si using GaP intermediate layer by metalorganic chemical vapor deposition

AU - Ishikawa, H.

AU - Soga, T.

AU - Nagatomo, T.

AU - Jimbo, T.

AU - Umeno, M.

PY - 1996/3/1

Y1 - 1996/3/1

M3 - Article

SP - We-P31

JO - Default journal

JF - Default journal

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