Highly c-axis aligned GaN thin film grown on Si using GaP intermediate layer by metalorganic chemical vapor deposition

H. Ishikawa, T. Soga, T. Nagatomo, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)We-P31
JournalDefault journal
Publication statusPublished - 1996 Mar 1

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