Highly c-axis aligned GaN thin film grown on Si using GaP intermediate layer by metalorganic chemical vapor deposition

H. Ishikawa, T. Soga, T. Nagatomo, T. Jimbo, M. Umeno

Research output: Contribution to journal › Article › peer-review

Cite this

@article{dc40eca582b6412f8d90969ec646461c,

title = "Highly c-axis aligned GaN thin film grown on Si using GaP intermediate layer by metalorganic chemical vapor deposition",

author = "H. Ishikawa and T. Soga and T. Nagatomo and T. Jimbo and M. Umeno",

year = "1996",

month = mar,

day = "1",

language = "English",

pages = "We--P31",

journal = "Default journal",

}