Highly efficient GaN-based light emitting diodes with micropits

M. Hao, T. Egawa, Hiroyasu Ishikawa

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Light emitting diodes (LEDs) on GaN templates with high-density V-shaped micropits have been grown and characterized by transmission electron microscopy, scanning electron microscopy, and photoluminescence. Higher emission efficiency has been obtained for the fabricated LEDs compared with those without V-shaped pits. The high efficiency of the LEDs is mainly attributed to the increase in light extraction efficiency due to the light extraction from the sidewalls of the V-shaped pits. The improved internal quantum efficiency of the device resulting from the reduction of the dislocation density in the light emitting area also contributes to the high efficiency of the LEDs.

Original languageEnglish
Article number241907
JournalApplied Physics Letters
Volume89
Issue number24
DOIs
Publication statusPublished - 2006
Externally publishedYes

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light emitting diodes
quantum efficiency
templates
photoluminescence
transmission electron microscopy
scanning electron microscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Highly efficient GaN-based light emitting diodes with micropits. / Hao, M.; Egawa, T.; Ishikawa, Hiroyasu.

In: Applied Physics Letters, Vol. 89, No. 24, 241907, 2006.

Research output: Contribution to journalArticle

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