Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC's

Tsuneo Tokumitsu, Makoto Hirano, Kimiyoshi Yamasaki, Chikara Yamaguchi, Masayoshi Aikawa

    Research output: Contribution to conferencePaper

    9 Citations (Scopus)

    Abstract

    A novel masterslice MMIC design approach employing a 3-D MMIC structure is described using a highly-integrated 17-24 GHz GaAs single-chip receiver and a 7-10 GHz Si reactive-impedance-matching amplifier, which are the most recent devices fabricated with our process. This approach considerably reduces TAT and manufacturing costs.

    Original languageEnglish
    Pages151-154
    Number of pages4
    Publication statusPublished - 1996 Dec 1
    EventProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA
    Duration: 1996 Nov 31996 Nov 6

    Other

    OtherProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
    CityOrlando, FL, USA
    Period96/11/396/11/6

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Fingerprint Dive into the research topics of 'Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC's'. Together they form a unique fingerprint.

  • Cite this

    Tokumitsu, T., Hirano, M., Yamasaki, K., Yamaguchi, C., & Aikawa, M. (1996). Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC's. 151-154. Paper presented at Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, Orlando, FL, USA, .