Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC's

Tsuneo Tokumitsu, Makoto Hirano, Kimiyoshi Yamasaki, Chikara Yamaguchi, Masayoshi Aikawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

A novel masterslice MMIC design approach employing a 3-D MMIC structure is described using a highly-integrated 17-24 GHz GaAs single-chip receiver and a 7-10 GHz Si reactive-impedance-matching amplifier, which are the most recent devices fabricated with our process. This approach considerably reduces TAT and manufacturing costs.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages151-154
Number of pages4
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA
Duration: 1996 Nov 31996 Nov 6

Other

OtherProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
CityOrlando, FL, USA
Period96/11/396/11/6

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tokumitsu, T., Hirano, M., Yamasaki, K., Yamaguchi, C., & Aikawa, M. (1996). Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC's. In Anon (Ed.), Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 151-154). Piscataway, NJ, United States: IEEE.