Abstract
A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.
| Original language | English |
|---|---|
| Title of host publication | 1996 26th European Microwave Conference, EuMC 1996 |
| Publisher | IEEE Computer Society |
| Pages | 199-203 |
| Number of pages | 5 |
| Volume | 1 |
| DOIs | |
| Publication status | Published - 1996 |
| Externally published | Yes |
| Event | 1996 26th European Microwave Conference, EuMC 1996 - Prague Duration: 1996 Sep 6 → 1996 Sep 13 |
Other
| Other | 1996 26th European Microwave Conference, EuMC 1996 |
|---|---|
| City | Prague |
| Period | 96/9/6 → 96/9/13 |
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ASJC Scopus subject areas
- Computer Networks and Communications
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
Highly-integrated three-dimensional MMIC 20-GHz single chip receiver. / Nishikawa, Kenjiro; Kamogawa, Kenji; Tokumitsu, Tsuneo; Aikawa, Masayoshi; Hirano, Makoto; Sugitani, Suehiro.
1996 26th European Microwave Conference, EuMC 1996. Vol. 1 IEEE Computer Society, 1996. p. 199-203 4138607.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Highly-integrated three-dimensional MMIC 20-GHz single chip receiver
AU - Nishikawa, Kenjiro
AU - Kamogawa, Kenji
AU - Tokumitsu, Tsuneo
AU - Aikawa, Masayoshi
AU - Hirano, Makoto
AU - Sugitani, Suehiro
PY - 1996
Y1 - 1996
N2 - A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.
AB - A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.
UR - http://www.scopus.com/inward/record.url?scp=0347632755&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0347632755&partnerID=8YFLogxK
U2 - 10.1109/EUMA.1996.337552
DO - 10.1109/EUMA.1996.337552
M3 - Conference contribution
AN - SCOPUS:0347632755
VL - 1
SP - 199
EP - 203
BT - 1996 26th European Microwave Conference, EuMC 1996
PB - IEEE Computer Society
ER -