Abstract
A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.
Original language | English |
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Pages | 199-203 |
Number of pages | 5 |
DOIs | |
Publication status | Published - 1996 Jan 1 |
Event | 1996 26th European Microwave Conference, EuMC 1996 - Prague, Czech Republic Duration: 1996 Sep 6 → 1996 Sep 13 |
Conference
Conference | 1996 26th European Microwave Conference, EuMC 1996 |
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Country/Territory | Czech Republic |
City | Prague |
Period | 96/9/6 → 96/9/13 |
ASJC Scopus subject areas
- Computer Networks and Communications
- Hardware and Architecture
- Electrical and Electronic Engineering