Highly-integrated three-dimensional MMIC 20-GHz single chip receiver

Kenjiro Nishikawa; Kenji Kamogawa; Tsuneo Tokumitsu; Masayoshi Aikawa; Makoto Hirano; Suehiro Sugitani

doi:10.1109/EUMA.1996.337552

Highly-integrated three-dimensional MMIC 20-GHz single chip receiver

Kenjiro Nishikawa, Kenji Kamogawa, Tsuneo Tokumitsu, Masayoshi Aikawa, Makoto Hirano, Suehiro Sugitani

Research output: Contribution to conference › Paper › peer-review

8 Citations (Scopus)

Abstract

A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.

Original language	English
Pages	199-203
Number of pages	5
DOIs	https://doi.org/10.1109/EUMA.1996.337552
Publication status	Published - 1996 Jan 1
Event	1996 26th European Microwave Conference, EuMC 1996 - Prague, Czech Republic Duration: 1996 Sep 6 → 1996 Sep 13

Conference

Conference	1996 26th European Microwave Conference, EuMC 1996
Country/Territory	Czech Republic
City	Prague
Period	96/9/6 → 96/9/13

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EUMA.1996.337552

Cite this

@conference{dd678135632242e0a3b096131d4213a5,

title = "Highly-integrated three-dimensional MMIC 20-GHz single chip receiver",

abstract = "A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.",

author = "Kenjiro Nishikawa and Kenji Kamogawa and Tsuneo Tokumitsu and Masayoshi Aikawa and Makoto Hirano and Suehiro Sugitani",

year = "1996",

month = jan,

day = "1",

doi = "10.1109/EUMA.1996.337552",

language = "English",

pages = "199--203",

note = "1996 26th European Microwave Conference, EuMC 1996 ; Conference date: 06-09-1996 Through 13-09-1996",

}

TY - CONF

T1 - Highly-integrated three-dimensional MMIC 20-GHz single chip receiver

AU - Nishikawa, Kenjiro

AU - Kamogawa, Kenji

AU - Tokumitsu, Tsuneo

AU - Aikawa, Masayoshi

AU - Hirano, Makoto

AU - Sugitani, Suehiro

PY - 1996/1/1

Y1 - 1996/1/1

N2 - A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.

AB - A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.

UR - http://www.scopus.com/inward/record.url?scp=0347632755&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347632755&partnerID=8YFLogxK

U2 - 10.1109/EUMA.1996.337552

DO - 10.1109/EUMA.1996.337552

M3 - Paper

AN - SCOPUS:0347632755

SP - 199

EP - 203

T2 - 1996 26th European Microwave Conference, EuMC 1996

Y2 - 6 September 1996 through 13 September 1996

ER -

Highly-integrated three-dimensional MMIC 20-GHz single chip receiver

Abstract

Conference

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this