Highly-integrated three-dimensional MMIC 20-GHz single chip receiver

Kenjiro Nishikawa; Kenji Kamogawa; Tsuneo Tokumitsu; Masayoshi Aikawa; Makoto Hirano; Suehiro Sugitani

doi:10.1109/EUMA.1996.337552

Highly-integrated three-dimensional MMIC 20-GHz single chip receiver

Kenjiro Nishikawa, Kenji Kamogawa, Tsuneo Tokumitsu, Masayoshi Aikawa, Makoto Hirano, Suehiro Sugitani

Research output: Contribution to conference › Paper

8 Citations (Scopus)

Abstract

A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.

Original language	English
Pages	199-203
Number of pages	5
DOIs	https://doi.org/10.1109/EUMA.1996.337552
Publication status	Published - 1996 Jan 1
Event	1996 26th European Microwave Conference, EuMC 1996 - Prague, Czech Republic Duration: 1996 Sep 6 → 1996 Sep 13

Conference

Conference	1996 26th European Microwave Conference, EuMC 1996
Country	Czech Republic
City	Prague
Period	96/9/6 → 96/9/13

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EUMA.1996.337552

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Cite this

Nishikawa, K., Kamogawa, K., Tokumitsu, T., Aikawa, M., Hirano, M., & Sugitani, S. (1996). Highly-integrated three-dimensional MMIC 20-GHz single chip receiver. 199-203. Paper presented at 1996 26th European Microwave Conference, EuMC 1996, Prague, Czech Republic. https://doi.org/10.1109/EUMA.1996.337552

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AU - Kamogawa, Kenji

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AU - Hirano, Makoto

AU - Sugitani, Suehiro

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AB - A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.

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