Highly-integrated three-dimensional MMIC 20-GHz single chip receiver

Kenjiro Nishikawa; Kenji Kamogawa; Tsuneo Tokumitsu; Masayoshi Aikawa; Makoto Hirano; Suehiro Sugitani

doi:10.1109/EUMA.1996.337552

Highly-integrated three-dimensional MMIC 20-GHz single chip receiver

Kenjiro Nishikawa, Kenji Kamogawa, Tsuneo Tokumitsu, Masayoshi Aikawa, Makoto Hirano, Suehiro Sugitani

Research output: Contribution to conference › Paper

8 Citations (Scopus)

Abstract

A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.

Original language	English
Pages	199-203
Number of pages	5
DOIs	https://doi.org/10.1109/EUMA.1996.337552
Publication status	Published - 1996 Jan 1
Event	1996 26th European Microwave Conference, EuMC 1996 - Prague, Czech Republic Duration: 1996 Sep 6 → 1996 Sep 13

Conference

Conference	1996 26th European Microwave Conference, EuMC 1996
Country	Czech Republic
City	Prague
Period	96/9/6 → 96/9/13

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EUMA.1996.337552

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Cite this

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title = "Highly-integrated three-dimensional MMIC 20-GHz single chip receiver",

abstract = "A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.",

author = "Kenjiro Nishikawa and Kenji Kamogawa and Tsuneo Tokumitsu and Masayoshi Aikawa and Makoto Hirano and Suehiro Sugitani",

year = "1996",

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doi = "10.1109/EUMA.1996.337552",

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pages = "199--203",

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AU - Nishikawa, Kenjiro

AU - Kamogawa, Kenji

AU - Tokumitsu, Tsuneo

AU - Aikawa, Masayoshi

AU - Hirano, Makoto

AU - Sugitani, Suehiro

PY - 1996/1/1

Y1 - 1996/1/1

N2 - A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.

AB - A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.

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T2 - 1996 26th European Microwave Conference, EuMC 1996

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