Highly-integrated three-dimensional MMIC 20-GHz single chip receiver

Kenjiro Nishikawa; Kenji Kamogawa; Tsuneo Tokumitsu; Masayoshi Aikawa; Makoto Hirano; Suehiro Sugitani

doi:10.1109/EUMA.1996.337552

Highly-integrated three-dimensional MMIC 20-GHz single chip receiver

Kenjiro Nishikawa, Kenji Kamogawa, Tsuneo Tokumitsu, Masayoshi Aikawa, Makoto Hirano, Suehiro Sugitani

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.

Original language	English
Title of host publication	1996 26th European Microwave Conference, EuMC 1996
Publisher	IEEE Computer Society
Pages	199-203
Number of pages	5
Volume	1
DOIs	https://doi.org/10.1109/EUMA.1996.337552
Publication status	Published - 1996
Externally published	Yes
Event	1996 26th European Microwave Conference, EuMC 1996 - Prague Duration: 1996 Sep 6 → 1996 Sep 13

Other

Other	1996 26th European Microwave Conference, EuMC 1996
City	Prague
Period	96/9/6 → 96/9/13

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ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

Cite this

Nishikawa, K., Kamogawa, K., Tokumitsu, T., Aikawa, M., Hirano, M., & Sugitani, S. (1996). Highly-integrated three-dimensional MMIC 20-GHz single chip receiver. In 1996 26th European Microwave Conference, EuMC 1996 (Vol. 1, pp. 199-203). [4138607] IEEE Computer Society. https://doi.org/10.1109/EUMA.1996.337552

Highly-integrated three-dimensional MMIC 20-GHz single chip receiver. / Nishikawa, Kenjiro; Kamogawa, Kenji; Tokumitsu, Tsuneo; Aikawa, Masayoshi; Hirano, Makoto; Sugitani, Suehiro.

1996 26th European Microwave Conference, EuMC 1996. Vol. 1 IEEE Computer Society, 1996. p. 199-203 4138607.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

@inproceedings{dd678135632242e0a3b096131d4213a5,

title = "Highly-integrated three-dimensional MMIC 20-GHz single chip receiver",

abstract = "A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.",

author = "Kenjiro Nishikawa and Kenji Kamogawa and Tsuneo Tokumitsu and Masayoshi Aikawa and Makoto Hirano and Suehiro Sugitani",

year = "1996",

doi = "10.1109/EUMA.1996.337552",

language = "English",

volume = "1",

pages = "199--203",

booktitle = "1996 26th European Microwave Conference, EuMC 1996",

publisher = "IEEE Computer Society",

note = "1996 26th European Microwave Conference, EuMC 1996 ; Conference date: 06-09-1996 Through 13-09-1996",

}

TY - GEN

T1 - Highly-integrated three-dimensional MMIC 20-GHz single chip receiver

AU - Nishikawa, Kenjiro

AU - Kamogawa, Kenji

AU - Tokumitsu, Tsuneo

AU - Aikawa, Masayoshi

AU - Hirano, Makoto

AU - Sugitani, Suehiro

PY - 1996

Y1 - 1996

N2 - A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.

AB - A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.

UR - http://www.scopus.com/inward/record.url?scp=0347632755&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347632755&partnerID=8YFLogxK

U2 - 10.1109/EUMA.1996.337552

DO - 10.1109/EUMA.1996.337552

M3 - Conference contribution

AN - SCOPUS:0347632755

VL - 1

SP - 199

EP - 203

BT - 1996 26th European Microwave Conference, EuMC 1996

PB - IEEE Computer Society

T2 - 1996 26th European Microwave Conference, EuMC 1996

Y2 - 6 September 1996 through 13 September 1996

ER -

Access to Document

10.1109/EUMA.1996.337552