Highly reliable interface of self-aligned CuSiN process with low-k SiC barrier dielectric (k=3.5) for 65nm node and beyond

T. Usami, T. Ide, Y. Kakuhara, Y. Ajima, K. Ueno, T. Maruyama, Y. Yu, E. Apen, K. Chattopadhyay, B. Van Schravendijk, N. Oda, M. Sekine

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Citations (Scopus)

Abstract

A highly reliable interface using a self-aligned CuSiN process with Low-k SiC barrier dielectric (k=3.5) has been developed for 65mn node and beyond. Using this process as the barrier dielectric, a 4% reduction of the capacitance between the adjacent lines was obtained in comparison to SiCN dielectric (k=4.9) without the electrical failure in addition, 39× via electro-migration (EM) improvement and 1.5× better TZDM were obtained in companson to the baseline NH3 plasma pretreatment process. And these interfaces were analyzed by XPS, TBM-EELS. According to these analyses, the mechanism for performance enhancement is proposed.

Original languageEnglish
Title of host publication2006 International Interconnect Technology Conference, IITC
Pages125-127
Number of pages3
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 International Interconnect Technology Conference, IITC - Burlingame, CA, United States
Duration: 2006 Jun 52006 Jun 7

Publication series

Name2006 International Interconnect Technology Conference, IITC

Conference

Conference2006 International Interconnect Technology Conference, IITC
CountryUnited States
CityBurlingame, CA
Period06/6/506/6/7

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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    Usami, T., Ide, T., Kakuhara, Y., Ajima, Y., Ueno, K., Maruyama, T., Yu, Y., Apen, E., Chattopadhyay, K., Van Schravendijk, B., Oda, N., & Sekine, M. (2006). Highly reliable interface of self-aligned CuSiN process with low-k SiC barrier dielectric (k=3.5) for 65nm node and beyond. In 2006 International Interconnect Technology Conference, IITC (pp. 125-127). [1648665] (2006 International Interconnect Technology Conference, IITC). https://doi.org/10.1109/IITC.2006.1648665