Highly resistive GaN layers formed by ion implantation of Zn along the c axis

Toshiyuki Oishi, Naruhisa Miura, Muneyoshi Suita, Takuma Nanjo, Yuji Abe, Tatsuo Ozeki, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo

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41 Citations (Scopus)

Abstract

The formation of a highly resistive layer using heavy ion implantation was reported. It was confirmed that a heavy ion such as Zn was able to produce damage-related defects by Monte Carlo simulation. Zn above the concentration of 1017 cm-3 was distributed through a GaN layer of 1700 nm thick, when ions were implanted by the condition where the ion energy and dose concentration were 350 keV and 1.9×1014 cm-2, respectively.

Original languageEnglish
Pages (from-to)1662-1666
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number3
DOIs
Publication statusPublished - 2003 Aug 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Oishi, T., Miura, N., Suita, M., Nanjo, T., Abe, Y., Ozeki, T., Ishikawa, H., Egawa, T., & Jimbo, T. (2003). Highly resistive GaN layers formed by ion implantation of Zn along the c axis. Journal of Applied Physics, 94(3), 1662-1666. https://doi.org/10.1063/1.1590412