Highly resistive GaN layers formed by ion implantation of Zn along the c axis

Toshiyuki Oishi, Naruhisa Miura, Muneyoshi Suita, Takuma Nanjo, Yuji Abe, Tatsuo Ozeki, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

The formation of a highly resistive layer using heavy ion implantation was reported. It was confirmed that a heavy ion such as Zn was able to produce damage-related defects by Monte Carlo simulation. Zn above the concentration of 1017 cm-3 was distributed through a GaN layer of 1700 nm thick, when ions were implanted by the condition where the ion energy and dose concentration were 350 keV and 1.9×1014 cm-2, respectively.

Original languageEnglish
Pages (from-to)1662-1666
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number3
DOIs
Publication statusPublished - 2003 Aug 1
Externally publishedYes

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ion implantation
heavy ions
ions
damage
dosage
defects
simulation
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Oishi, T., Miura, N., Suita, M., Nanjo, T., Abe, Y., Ozeki, T., ... Jimbo, T. (2003). Highly resistive GaN layers formed by ion implantation of Zn along the c axis. Journal of Applied Physics, 94(3), 1662-1666. https://doi.org/10.1063/1.1590412

Highly resistive GaN layers formed by ion implantation of Zn along the c axis. / Oishi, Toshiyuki; Miura, Naruhisa; Suita, Muneyoshi; Nanjo, Takuma; Abe, Yuji; Ozeki, Tatsuo; Ishikawa, Hiroyasu; Egawa, Takashi; Jimbo, Takashi.

In: Journal of Applied Physics, Vol. 94, No. 3, 01.08.2003, p. 1662-1666.

Research output: Contribution to journalArticle

Oishi, T, Miura, N, Suita, M, Nanjo, T, Abe, Y, Ozeki, T, Ishikawa, H, Egawa, T & Jimbo, T 2003, 'Highly resistive GaN layers formed by ion implantation of Zn along the c axis', Journal of Applied Physics, vol. 94, no. 3, pp. 1662-1666. https://doi.org/10.1063/1.1590412
Oishi, Toshiyuki ; Miura, Naruhisa ; Suita, Muneyoshi ; Nanjo, Takuma ; Abe, Yuji ; Ozeki, Tatsuo ; Ishikawa, Hiroyasu ; Egawa, Takashi ; Jimbo, Takashi. / Highly resistive GaN layers formed by ion implantation of Zn along the c axis. In: Journal of Applied Physics. 2003 ; Vol. 94, No. 3. pp. 1662-1666.
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