Impact of Si-doping on the Eu2+ luminescence in AlN

Eu phosphors

B. Dierrea, X. L. Yuan, Kazuo Inoue, N. Hirosaki, T. Takeda, R. J. Xie, T. Sekiguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationTechnical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009
Pages61-62
Number of pages2
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009 - Hamamatsu, Japan
Duration: 2009 Jul 202009 Jul 24

Other

Other2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009
CountryJapan
CityHamamatsu
Period09/7/2009/7/24

Fingerprint

Phosphors
Luminescence
Doping (additives)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Dierrea, B., Yuan, X. L., Inoue, K., Hirosaki, N., Takeda, T., Xie, R. J., & Sekiguchi, T. (2009). Impact of Si-doping on the Eu2+ luminescence in AlN: Eu phosphors. In Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009 (pp. 61-62). [5271842] https://doi.org/10.1109/IVNC.2009.5271842

Impact of Si-doping on the Eu2+ luminescence in AlN : Eu phosphors. / Dierrea, B.; Yuan, X. L.; Inoue, Kazuo; Hirosaki, N.; Takeda, T.; Xie, R. J.; Sekiguchi, T.

Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009. 2009. p. 61-62 5271842.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dierrea, B, Yuan, XL, Inoue, K, Hirosaki, N, Takeda, T, Xie, RJ & Sekiguchi, T 2009, Impact of Si-doping on the Eu2+ luminescence in AlN: Eu phosphors. in Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009., 5271842, pp. 61-62, 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, Hamamatsu, Japan, 09/7/20. https://doi.org/10.1109/IVNC.2009.5271842
Dierrea B, Yuan XL, Inoue K, Hirosaki N, Takeda T, Xie RJ et al. Impact of Si-doping on the Eu2+ luminescence in AlN: Eu phosphors. In Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009. 2009. p. 61-62. 5271842 https://doi.org/10.1109/IVNC.2009.5271842
Dierrea, B. ; Yuan, X. L. ; Inoue, Kazuo ; Hirosaki, N. ; Takeda, T. ; Xie, R. J. ; Sekiguchi, T. / Impact of Si-doping on the Eu2+ luminescence in AlN : Eu phosphors. Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009. 2009. pp. 61-62
@inproceedings{6c56e7c8822541d7a2c6a13866a6f962,
title = "Impact of Si-doping on the Eu2+ luminescence in AlN: Eu phosphors",
author = "B. Dierrea and Yuan, {X. L.} and Kazuo Inoue and N. Hirosaki and T. Takeda and Xie, {R. J.} and T. Sekiguchi",
year = "2009",
doi = "10.1109/IVNC.2009.5271842",
language = "English",
isbn = "9781424435883",
pages = "61--62",
booktitle = "Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009",

}

TY - GEN

T1 - Impact of Si-doping on the Eu2+ luminescence in AlN

T2 - Eu phosphors

AU - Dierrea, B.

AU - Yuan, X. L.

AU - Inoue, Kazuo

AU - Hirosaki, N.

AU - Takeda, T.

AU - Xie, R. J.

AU - Sekiguchi, T.

PY - 2009

Y1 - 2009

UR - http://www.scopus.com/inward/record.url?scp=70449864471&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70449864471&partnerID=8YFLogxK

U2 - 10.1109/IVNC.2009.5271842

DO - 10.1109/IVNC.2009.5271842

M3 - Conference contribution

SN - 9781424435883

SP - 61

EP - 62

BT - Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009

ER -