Impact of Si-doping on the Eu2+ luminescence in AlN:Eu phosphors

B. Dierrea, X. L. Yuan, K. Inoue, N. Hirosaki, T. Takeda, R. J. Xie, T. Sekiguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationTechnical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009
Pages61-62
Number of pages2
DOIs
Publication statusPublished - 2009 Nov 25
Event2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009 - Hamamatsu, Japan
Duration: 2009 Jul 202009 Jul 24

Publication series

NameTechnical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009

Other

Other2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009
CountryJapan
CityHamamatsu
Period09/7/2009/7/24

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Dierrea, B., Yuan, X. L., Inoue, K., Hirosaki, N., Takeda, T., Xie, R. J., & Sekiguchi, T. (2009). Impact of Si-doping on the Eu2+ luminescence in AlN:Eu phosphors. In Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009 (pp. 61-62). [5271842] (Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009). https://doi.org/10.1109/IVNC.2009.5271842