Impact of Si-doping on the Eu2+ luminescence in AlN:Eu phosphors

B. Dierrea; X. L. Yuan; K. Inoue; N. Hirosaki; T. Takeda; R. J. Xie; T. Sekiguchi

doi:10.1109/IVNC.2009.5271842

Impact of Si-doping on the Eu²⁺ luminescence in AlN:Eu phosphors

B. Dierrea, X. L. Yuan, K. Inoue, N. Hirosaki, T. Takeda, R. J. Xie, T. Sekiguchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009
Pages	61-62
Number of pages	2
DOIs	https://doi.org/10.1109/IVNC.2009.5271842
Publication status	Published - 2009
Externally published	Yes
Event	2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009 - Hamamatsu, Japan Duration: 2009 Jul 20 → 2009 Jul 24

Publication series

Name	Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009

Other

Other	2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009
Country/Territory	Japan
City	Hamamatsu
Period	09/7/20 → 09/7/24

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IVNC.2009.5271842

Cite this

Dierrea, B., Yuan, X. L., Inoue, K., Hirosaki, N., Takeda, T., Xie, R. J., & Sekiguchi, T. (2009). Impact of Si-doping on the Eu²⁺ luminescence in AlN:Eu phosphors. In Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009 (pp. 61-62). [5271842] (Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009). https://doi.org/10.1109/IVNC.2009.5271842

Impact of Si-doping on the Eu²⁺ luminescence in AlN:Eu phosphors. / Dierrea, B.; Yuan, X. L.; Inoue, K. et al.

Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009. 2009. p. 61-62 5271842 (Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Dierrea, B, Yuan, XL, Inoue, K, Hirosaki, N, Takeda, T, Xie, RJ & Sekiguchi, T 2009, Impact of Si-doping on the Eu²⁺ luminescence in AlN:Eu phosphors. in Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009., 5271842, Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, pp. 61-62, 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, Hamamatsu, Japan, 09/7/20. https://doi.org/10.1109/IVNC.2009.5271842

@inproceedings{6c56e7c8822541d7a2c6a13866a6f962,

title = "Impact of Si-doping on the Eu2+ luminescence in AlN:Eu phosphors",

author = "B. Dierrea and Yuan, {X. L.} and K. Inoue and N. Hirosaki and T. Takeda and Xie, {R. J.} and T. Sekiguchi",

year = "2009",

doi = "10.1109/IVNC.2009.5271842",

language = "English",

isbn = "9781424435883",

series = "Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009",

pages = "61--62",

booktitle = "Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009",

note = "2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009 ; Conference date: 20-07-2009 Through 24-07-2009",

}

TY - GEN

T1 - Impact of Si-doping on the Eu2+ luminescence in AlN:Eu phosphors

AU - Dierrea, B.

AU - Yuan, X. L.

AU - Inoue, K.

AU - Hirosaki, N.

AU - Takeda, T.

AU - Xie, R. J.

AU - Sekiguchi, T.

PY - 2009

Y1 - 2009

UR - http://www.scopus.com/inward/record.url?scp=70449864471&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70449864471&partnerID=8YFLogxK

U2 - 10.1109/IVNC.2009.5271842

DO - 10.1109/IVNC.2009.5271842

M3 - Conference contribution

AN - SCOPUS:70449864471

SN - 9781424435883

T3 - Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009

SP - 61

EP - 62

BT - Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009

T2 - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009

Y2 - 20 July 2009 through 24 July 2009

ER -