Impact of Si-doping on the Eu2+ luminescence in AlN:Eu phosphors

B. Dierrea; X. L. Yuan; K. Inoue; N. Hirosaki; T. Takeda; R. J. Xie; T. Sekiguchi

doi:10.1109/IVNC.2009.5271842

Impact of Si-doping on the Eu²⁺ luminescence in AlN:Eu phosphors

B. Dierrea, X. L. Yuan, K. Inoue, N. Hirosaki, T. Takeda, R. J. Xie, T. Sekiguchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009
Pages	61-62
Number of pages	2
DOIs	https://doi.org/10.1109/IVNC.2009.5271842
Publication status	Published - 2009
Externally published	Yes
Event	2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009 - Hamamatsu, Japan Duration: 2009 Jul 20 → 2009 Jul 24

Publication series

Name	Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009

Other

Other	2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009
Country/Territory	Japan
City	Hamamatsu
Period	09/7/20 → 09/7/24

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IVNC.2009.5271842

Cite this

Dierrea, B., Yuan, X. L., Inoue, K., Hirosaki, N., Takeda, T., Xie, R. J., & Sekiguchi, T. (2009). Impact of Si-doping on the Eu²⁺ luminescence in AlN:Eu phosphors. In Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009 (pp. 61-62). [5271842] (Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009). https://doi.org/10.1109/IVNC.2009.5271842

Impact of Si-doping on the Eu²⁺ luminescence in AlN:Eu phosphors. / Dierrea, B.; Yuan, X. L.; Inoue, K. et al.

Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009. 2009. p. 61-62 5271842 (Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Dierrea, B, Yuan, XL, Inoue, K, Hirosaki, N, Takeda, T, Xie, RJ & Sekiguchi, T 2009, Impact of Si-doping on the Eu²⁺ luminescence in AlN:Eu phosphors. in Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009., 5271842, Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, pp. 61-62, 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009, Hamamatsu, Japan, 09/7/20. https://doi.org/10.1109/IVNC.2009.5271842

Dierrea B, Yuan XL, Inoue K, Hirosaki N, Takeda T, Xie RJ et al. Impact of Si-doping on the Eu²⁺ luminescence in AlN:Eu phosphors. In Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009. 2009. p. 61-62. 5271842. (Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009). https://doi.org/10.1109/IVNC.2009.5271842

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