Improved characteristics of blue and green InGaN-based light-emitting diodes on Si grown by metalorganic chemical vapor deposition

Takashi Egawa, Tetsuji Moku, Hiroyasu Ishikawa, Kouji Ohtsuka, Takashi Jimbo

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We report significantly improved characteristics of InGaN multiple-quantum well blue and green light-emitting diodes (LEDs) on Si (111) substrates using metalorganic chemical vapor deposition. A high-temperature-grown thin AlN layer and AlN/GaN multilayers have been used for the growth of high-quality active layer on Si substrate. The blue LED on Si exhibited an operating voltage of 4.1 V, a series resistance of 30 Ω, an optical output power of 18 μW and a peak emission wavelength of 478 nm with a full width at half maximum of 22 nm at 20 mA drive current. These characteristics are comparable to those of LED on sapphire substrate. The green LED was also fabricated on Si substrate successfully.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number6 B
Publication statusPublished - 2002 Jun 15
Externally publishedYes



  • AlN layer
  • AlN/GaN multilayers
  • InGaN
  • LED on Si

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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