| Original language | English |
|---|---|
| Pages (from-to) | A10-4 |
| Journal | Default journal |
| Publication status | Published - 2004 Mar 1 |
Cite this
Ishikawa, H., Asano, K., Zhang, B., Egawa, T., & Jimbo, T. (2004). Improved characteristics of GaN-based light emitting diode by distributed Bragg reflector grown on Si. Default journal, A10-4.
Improved characteristics of GaN-based light emitting diode by distributed Bragg reflector grown on Si. / Ishikawa, H.; Asano, K.; Zhang, B.; Egawa, T.; Jimbo, T.
In: Default journal, 01.03.2004, p. A10-4.Research output: Contribution to journal › Article
Ishikawa, H, Asano, K, Zhang, B, Egawa, T & Jimbo, T 2004, 'Improved characteristics of GaN-based light emitting diode by distributed Bragg reflector grown on Si', Default journal, pp. A10-4.
Ishikawa H, Asano K, Zhang B, Egawa T, Jimbo T. Improved characteristics of GaN-based light emitting diode by distributed Bragg reflector grown on Si. Default journal. 2004 Mar 1;A10-4.
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title = "Improved characteristics of GaN-based light emitting diode by distributed Bragg reflector grown on Si",
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T1 - Improved characteristics of GaN-based light emitting diode by distributed Bragg reflector grown on Si
AU - Ishikawa, H.
AU - Asano, K.
AU - Zhang, B.
AU - Egawa, T.
AU - Jimbo, T.
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