Improved characteristics of GaN-based light emitting diode by distributed Bragg reflector grown on Si

H. Ishikawa, K. Asano, B. Zhang, T. Egawa, T. Jimbo

Research output: Contribution to journalArticle

21 Citations (Scopus)
Original languageEnglish
Pages (from-to)A10-4
JournalDefault journal
Publication statusPublished - 2004 Mar 1

Cite this

Improved characteristics of GaN-based light emitting diode by distributed Bragg reflector grown on Si. / Ishikawa, H.; Asano, K.; Zhang, B.; Egawa, T.; Jimbo, T.

In: Default journal, 01.03.2004, p. A10-4.

Research output: Contribution to journalArticle

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