| Original language | English |
|---|---|
| Pages (from-to) | A10-4 |
| Journal | Default journal |
| Publication status | Published - 2004 Mar 1 |
Cite this
Ishikawa, H., Asano, K., Zhang, B., Egawa, T., & Jimbo, T. (2004). Improved characteristics of GaN-based light emitting diode by distributed Bragg reflector grown on Si. Default journal, A10-4.