Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si

Hiroyasu Ishikawa, K. Asano, B. Zhang, T. Egawa, T. Jimbo

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

We report the improved characteristics of GaInN light-emitting diodes (LEDs) on Si substrates by a distributed Bragg reflector (DBR). The DBR-based GaInN multi quantum-well LED structures were grown on n-Si (111) substrates using a conventional horizontal metalorganic chemical vapor deposition method. The number of Al0.3Ga0.7N/AlN pairs in the DBR was changed from 1 to 5. The measured PL peak intensity ratio agrees well with the calculated value. In an EL measurement, the output power increases with an increase in the number of pairs in the DBR (less than 3 pairs). The light output power of a 3-pair DBR-based LED is approximately twofold larger than that of a non-DBR-based LED. However, it significantly decreases in a 5 pair of DBR, because of a crack formation. Although the suppression of crack formation remains a problem, the DBR is still very promising for the fabrication of high-performance LEDs on Si.

Original languageEnglish
Pages (from-to)2653-2657
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number12
DOIs
Publication statusPublished - 2004 Sep
Externally publishedYes

Fingerprint

Distributed Bragg reflectors
Bragg reflectors
Light emitting diodes
light emitting diodes
crack initiation
Crack initiation
Metallorganic chemical vapor deposition
Substrates
output
Semiconductor quantum wells
metalorganic chemical vapor deposition
Fabrication
retarding
quantum wells
fabrication

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si. / Ishikawa, Hiroyasu; Asano, K.; Zhang, B.; Egawa, T.; Jimbo, T.

In: Physica Status Solidi (A) Applied Research, Vol. 201, No. 12, 09.2004, p. 2653-2657.

Research output: Contribution to journalArticle

@article{18bbc1ed049340bfa0280a76b5c3ea32,
title = "Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si",
abstract = "We report the improved characteristics of GaInN light-emitting diodes (LEDs) on Si substrates by a distributed Bragg reflector (DBR). The DBR-based GaInN multi quantum-well LED structures were grown on n-Si (111) substrates using a conventional horizontal metalorganic chemical vapor deposition method. The number of Al0.3Ga0.7N/AlN pairs in the DBR was changed from 1 to 5. The measured PL peak intensity ratio agrees well with the calculated value. In an EL measurement, the output power increases with an increase in the number of pairs in the DBR (less than 3 pairs). The light output power of a 3-pair DBR-based LED is approximately twofold larger than that of a non-DBR-based LED. However, it significantly decreases in a 5 pair of DBR, because of a crack formation. Although the suppression of crack formation remains a problem, the DBR is still very promising for the fabrication of high-performance LEDs on Si.",
author = "Hiroyasu Ishikawa and K. Asano and B. Zhang and T. Egawa and T. Jimbo",
year = "2004",
month = "9",
doi = "10.1002/pssa.200405002",
language = "English",
volume = "201",
pages = "2653--2657",
journal = "Physica Status Solidi (A) Applied Research",
issn = "0031-8965",
publisher = "Wiley-VCH Verlag",
number = "12",

}

TY - JOUR

T1 - Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si

AU - Ishikawa, Hiroyasu

AU - Asano, K.

AU - Zhang, B.

AU - Egawa, T.

AU - Jimbo, T.

PY - 2004/9

Y1 - 2004/9

N2 - We report the improved characteristics of GaInN light-emitting diodes (LEDs) on Si substrates by a distributed Bragg reflector (DBR). The DBR-based GaInN multi quantum-well LED structures were grown on n-Si (111) substrates using a conventional horizontal metalorganic chemical vapor deposition method. The number of Al0.3Ga0.7N/AlN pairs in the DBR was changed from 1 to 5. The measured PL peak intensity ratio agrees well with the calculated value. In an EL measurement, the output power increases with an increase in the number of pairs in the DBR (less than 3 pairs). The light output power of a 3-pair DBR-based LED is approximately twofold larger than that of a non-DBR-based LED. However, it significantly decreases in a 5 pair of DBR, because of a crack formation. Although the suppression of crack formation remains a problem, the DBR is still very promising for the fabrication of high-performance LEDs on Si.

AB - We report the improved characteristics of GaInN light-emitting diodes (LEDs) on Si substrates by a distributed Bragg reflector (DBR). The DBR-based GaInN multi quantum-well LED structures were grown on n-Si (111) substrates using a conventional horizontal metalorganic chemical vapor deposition method. The number of Al0.3Ga0.7N/AlN pairs in the DBR was changed from 1 to 5. The measured PL peak intensity ratio agrees well with the calculated value. In an EL measurement, the output power increases with an increase in the number of pairs in the DBR (less than 3 pairs). The light output power of a 3-pair DBR-based LED is approximately twofold larger than that of a non-DBR-based LED. However, it significantly decreases in a 5 pair of DBR, because of a crack formation. Although the suppression of crack formation remains a problem, the DBR is still very promising for the fabrication of high-performance LEDs on Si.

UR - http://www.scopus.com/inward/record.url?scp=6344238748&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6344238748&partnerID=8YFLogxK

U2 - 10.1002/pssa.200405002

DO - 10.1002/pssa.200405002

M3 - Article

AN - SCOPUS:6344238748

VL - 201

SP - 2653

EP - 2657

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 12

ER -