Abstract
An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current.
| Original language | English |
|---|---|
| Pages (from-to) | 1804-1806 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 76 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2000 Apr 3 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Cite this
Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Umeno, M., & Jimbo, T. (2000). Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire. Applied Physics Letters, 76(14), 1804-1806. https://doi.org/10.1063/1.126171