Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

N. Nakada; M. Nakaji; H. Ishikawa; T. Egawa; M. Umeno; T. Jimbo

doi:10.1063/1.126171

Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

N. Nakada, M. Nakaji, H. Ishikawa, T. Egawa, M. Umeno, T. Jimbo

Research output: Contribution to journal › Article › peer-review

106 Citations (Scopus)

Abstract

An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current.

Original language	English
Pages (from-to)	1804-1806
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	14
DOIs	https://doi.org/10.1063/1.126171
Publication status	Published - 2000 Apr 3
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.126171

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author = "N. Nakada and M. Nakaji and H. Ishikawa and T. Egawa and M. Umeno and T. Jimbo",

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AU - Nakada, N.

AU - Nakaji, M.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Umeno, M.

AU - Jimbo, T.

PY - 2000/4/3

Y1 - 2000/4/3

N2 - An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current.

AB - An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current.

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Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

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