Abstract
An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current.
| Original language | English |
|---|---|
| Pages (from-to) | 1804-1806 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 76 |
| Issue number | 14 |
| Publication status | Published - 2000 Apr 3 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire. / Nakada, N.; Nakaji, M.; Ishikawa, Hiroyasu; Egawa, T.; Umeno, M.; Jimbo, T.
In: Applied Physics Letters, Vol. 76, No. 14, 03.04.2000, p. 1804-1806.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire
AU - Nakada, N.
AU - Nakaji, M.
AU - Ishikawa, Hiroyasu
AU - Egawa, T.
AU - Umeno, M.
AU - Jimbo, T.
PY - 2000/4/3
Y1 - 2000/4/3
N2 - An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current.
AB - An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current.
UR - http://www.scopus.com/inward/record.url?scp=0001249850&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0001249850&partnerID=8YFLogxK
M3 - Article
VL - 76
SP - 1804
EP - 1806
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
ER -