Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

N. Nakada, M. Nakaji, Hiroyasu Ishikawa, T. Egawa, M. Umeno, T. Jimbo

Research output: Contribution to journalArticle

98 Citations (Scopus)

Abstract

An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current.

Original languageEnglish
Pages (from-to)1804-1806
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number14
Publication statusPublished - 2000 Apr 3
Externally publishedYes

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Bragg reflectors
sapphire
light emitting diodes
quantum wells
metalorganic chemical vapor deposition
quantum efficiency
direct current
output

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire. / Nakada, N.; Nakaji, M.; Ishikawa, Hiroyasu; Egawa, T.; Umeno, M.; Jimbo, T.

In: Applied Physics Letters, Vol. 76, No. 14, 03.04.2000, p. 1804-1806.

Research output: Contribution to journalArticle

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