Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

N. Nakada; M. Nakaji; H. Ishikawa; T. Egawa; M. Umeno; T. Jimbo

doi:10.1063/1.126171

Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

N. Nakada, M. Nakaji, H. Ishikawa, T. Egawa, M. Umeno, T. Jimbo

Research output: Contribution to journal › Article › peer-review

108 Citations (Scopus)

Abstract

An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current.

Original language	English
Pages (from-to)	1804-1806
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	14
DOIs	https://doi.org/10.1063/1.126171
Publication status	Published - 2000 Apr 3
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.126171

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@article{db07219cba6e42e7a85c61aff2c2f41e,

title = "Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire",

abstract = "An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current.",

author = "N. Nakada and M. Nakaji and H. Ishikawa and T. Egawa and M. Umeno and T. Jimbo",

year = "2000",

month = apr,

day = "3",

doi = "10.1063/1.126171",

language = "English",

volume = "76",

pages = "1804--1806",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

AU - Nakada, N.

AU - Nakaji, M.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Umeno, M.

AU - Jimbo, T.

PY - 2000/4/3

Y1 - 2000/4/3

N2 - An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current.

AB - An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current.

UR - http://www.scopus.com/inward/record.url?scp=0001249850&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001249850&partnerID=8YFLogxK

U2 - 10.1063/1.126171

DO - 10.1063/1.126171

M3 - Article

AN - SCOPUS:0001249850

VL - 76

SP - 1804

EP - 1806

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

ER -

Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

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