| Original language | English |
|---|---|
| Pages (from-to) | 1131-1133 |
| Journal | Appl. Phys. Lett. |
| Volume | 81 |
| Publication status | Published - 2002 Aug 1 |
Cite this
Arulkumaran, S., Sakai, M., Egawa, T., Ishikawa, H., Jimbo, T., Shibata, T., ... Kuraoka?2?, Y. (2002). Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates. Appl. Phys. Lett., 81, 1131-1133.
Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates. / Arulkumaran, S.; Sakai, M.; Egawa, T.; Ishikawa, H.; Jimbo, T.; Shibata, T.; Asai, K.; Sumiya, S.; Kuraoka?2?, Y.
In: Appl. Phys. Lett., Vol. 81, 01.08.2002, p. 1131-1133.Research output: Contribution to journal › Article
Arulkumaran, S, Sakai, M, Egawa, T, Ishikawa, H, Jimbo, T, Shibata, T, Asai, K, Sumiya, S & Kuraoka?2?, Y 2002, 'Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates', Appl. Phys. Lett., vol. 81, pp. 1131-1133.
Arulkumaran S, Sakai M, Egawa T, Ishikawa H, Jimbo T, Shibata T et al. Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates. Appl. Phys. Lett. 2002 Aug 1;81:1131-1133.
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author = "S. Arulkumaran and M. Sakai and T. Egawa and H. Ishikawa and T. Jimbo and T. Shibata and K. Asai and S. Sumiya and Y. Kuraoka?2?",
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AU - Jimbo, T.
AU - Shibata, T.
AU - Asai, K.
AU - Sumiya, S.
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