Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates

S. Arulkumaran, M. Sakai, T. Egawa, H. Ishikawa, T. Jimbo, T. Shibata, K. Asai, S. Sumiya, Y. Kuraoka?2?

Research output: Contribution to journalArticle

58 Citations (Scopus)
Original languageEnglish
Pages (from-to)1131-1133
JournalAppl. Phys. Lett.
Volume81
Publication statusPublished - 2002 Aug 1

Cite this

Arulkumaran, S., Sakai, M., Egawa, T., Ishikawa, H., Jimbo, T., Shibata, T., ... Kuraoka?2?, Y. (2002). Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates. Appl. Phys. Lett., 81, 1131-1133.

Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates. / Arulkumaran, S.; Sakai, M.; Egawa, T.; Ishikawa, H.; Jimbo, T.; Shibata, T.; Asai, K.; Sumiya, S.; Kuraoka?2?, Y.

In: Appl. Phys. Lett., Vol. 81, 01.08.2002, p. 1131-1133.

Research output: Contribution to journalArticle

Arulkumaran, S, Sakai, M, Egawa, T, Ishikawa, H, Jimbo, T, Shibata, T, Asai, K, Sumiya, S & Kuraoka?2?, Y 2002, 'Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates', Appl. Phys. Lett., vol. 81, pp. 1131-1133.
Arulkumaran, S. ; Sakai, M. ; Egawa, T. ; Ishikawa, H. ; Jimbo, T. ; Shibata, T. ; Asai, K. ; Sumiya, S. ; Kuraoka?2?, Y. / Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates. In: Appl. Phys. Lett. 2002 ; Vol. 81. pp. 1131-1133.
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