Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates

S. Arulkumaran, M. Sakai, T. Egawa, H. Ishikawa, T. Jimbo, T. Shibata, K. Asai, S. Sumiya, Y. Kuraoka?2?

Research output: Contribution to journalArticle

61 Citations (Scopus)
Original languageEnglish
Pages (from-to)1131-1133
JournalAppl. Phys. Lett.
Volume81
Publication statusPublished - 2002 Aug 1

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Arulkumaran, S., Sakai, M., Egawa, T., Ishikawa, H., Jimbo, T., Shibata, T., Asai, K., Sumiya, S., & Kuraoka?2?, Y. (2002). Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates. Appl. Phys. Lett., 81, 1131-1133.