Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates

S. Arulkumaran, M. Sakai, T. Egawa, H. Ishikawa, T. Jimbo, T. Shibata, K. Asai, S. Sumiya, Y. Kuraoka?2?

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)
Original languageEnglish
Pages (from-to)1131-1133
JournalAppl. Phys. Lett.
Volume81
Publication statusPublished - 2002 Aug 1

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