Original language | English |
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Pages (from-to) | 1131-1133 |
Journal | Appl. Phys. Lett. |
Volume | 81 |
Publication status | Published - 2002 Aug 1 |
Improved dc characteristics of AlGaN/ GaN high-electron-mobility transistors on AlN/sapphire templates
S. Arulkumaran, M. Sakai, T. Egawa, H. Ishikawa, T. Jimbo, T. Shibata, K. Asai, S. Sumiya, Y. Kuraoka?2?
Research output: Contribution to journal › Article › peer-review
65
Citations
(Scopus)