Improved MOCVD growth of GaN on Si-on-porous-silicon substrates

Hiroyasu Ishikawa, K. Shimanaka, M. Azfar Bin M Amir, Y. Hara, M. Nakanishi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The mechanism of the poor surface morphology of MOCVD-grown GaN on porous Si (PSi) substrates was explored. Transmission electron microscopy suggests that a vacancy growth of pores starts, which is accompanied by the migration of the top surface of the PSi layer during the initial growth stage of GaN on the AlN inter layer. This causes a lot of pits on top GaN and wavy interface between GaN of the PSi layer, deteriorating the poor surface morphology. The epitaxial Si layer on PSi is effective in suppressing the migration of the top surface of the PSi layer. The GaN film on the epitaxial-Si/PSi shows a mirror surface with pits-free and very few cracks. No voids at the interface between the AlN IL and Si/PSi substrate are observed.

Original languageEnglish
Pages (from-to)2049-2051
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume7
Issue number7-8
DOIs
Publication statusPublished - 2010

Fingerprint

porous silicon
metalorganic chemical vapor deposition
voids
cracks
mirrors
porosity
transmission electron microscopy
causes

Keywords

  • Defects
  • GaN
  • Interface formation
  • MOCVD
  • Structure

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Improved MOCVD growth of GaN on Si-on-porous-silicon substrates. / Ishikawa, Hiroyasu; Shimanaka, K.; Amir, M. Azfar Bin M; Hara, Y.; Nakanishi, M.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 7, No. 7-8, 2010, p. 2049-2051.

Research output: Contribution to journalArticle

Ishikawa, Hiroyasu ; Shimanaka, K. ; Amir, M. Azfar Bin M ; Hara, Y. ; Nakanishi, M. / Improved MOCVD growth of GaN on Si-on-porous-silicon substrates. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2010 ; Vol. 7, No. 7-8. pp. 2049-2051.
@article{9e975c6abd394632a6d7309585ce0605,
title = "Improved MOCVD growth of GaN on Si-on-porous-silicon substrates",
abstract = "The mechanism of the poor surface morphology of MOCVD-grown GaN on porous Si (PSi) substrates was explored. Transmission electron microscopy suggests that a vacancy growth of pores starts, which is accompanied by the migration of the top surface of the PSi layer during the initial growth stage of GaN on the AlN inter layer. This causes a lot of pits on top GaN and wavy interface between GaN of the PSi layer, deteriorating the poor surface morphology. The epitaxial Si layer on PSi is effective in suppressing the migration of the top surface of the PSi layer. The GaN film on the epitaxial-Si/PSi shows a mirror surface with pits-free and very few cracks. No voids at the interface between the AlN IL and Si/PSi substrate are observed.",
keywords = "Defects, GaN, Interface formation, MOCVD, Structure",
author = "Hiroyasu Ishikawa and K. Shimanaka and Amir, {M. Azfar Bin M} and Y. Hara and M. Nakanishi",
year = "2010",
doi = "10.1002/pssc.200983496",
language = "English",
volume = "7",
pages = "2049--2051",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "7-8",

}

TY - JOUR

T1 - Improved MOCVD growth of GaN on Si-on-porous-silicon substrates

AU - Ishikawa, Hiroyasu

AU - Shimanaka, K.

AU - Amir, M. Azfar Bin M

AU - Hara, Y.

AU - Nakanishi, M.

PY - 2010

Y1 - 2010

N2 - The mechanism of the poor surface morphology of MOCVD-grown GaN on porous Si (PSi) substrates was explored. Transmission electron microscopy suggests that a vacancy growth of pores starts, which is accompanied by the migration of the top surface of the PSi layer during the initial growth stage of GaN on the AlN inter layer. This causes a lot of pits on top GaN and wavy interface between GaN of the PSi layer, deteriorating the poor surface morphology. The epitaxial Si layer on PSi is effective in suppressing the migration of the top surface of the PSi layer. The GaN film on the epitaxial-Si/PSi shows a mirror surface with pits-free and very few cracks. No voids at the interface between the AlN IL and Si/PSi substrate are observed.

AB - The mechanism of the poor surface morphology of MOCVD-grown GaN on porous Si (PSi) substrates was explored. Transmission electron microscopy suggests that a vacancy growth of pores starts, which is accompanied by the migration of the top surface of the PSi layer during the initial growth stage of GaN on the AlN inter layer. This causes a lot of pits on top GaN and wavy interface between GaN of the PSi layer, deteriorating the poor surface morphology. The epitaxial Si layer on PSi is effective in suppressing the migration of the top surface of the PSi layer. The GaN film on the epitaxial-Si/PSi shows a mirror surface with pits-free and very few cracks. No voids at the interface between the AlN IL and Si/PSi substrate are observed.

KW - Defects

KW - GaN

KW - Interface formation

KW - MOCVD

KW - Structure

UR - http://www.scopus.com/inward/record.url?scp=77955800728&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955800728&partnerID=8YFLogxK

U2 - 10.1002/pssc.200983496

DO - 10.1002/pssc.200983496

M3 - Article

AN - SCOPUS:77955800728

VL - 7

SP - 2049

EP - 2051

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 7-8

ER -