TY - JOUR
T1 - Improved thermoelectric property of B-doped Si/Ge multilayered quantum dot films prepared by RF magnetron sputtering
AU - Peng, Ying
AU - Miao, Lei
AU - Li, Chao
AU - Huang, Rong
AU - Urushihara, Daisuke
AU - Asaka, Toru
AU - Nakatsuka, Osamu
AU - Tanemura, Sakae
N1 - Funding Information:
1Guangxi Key Laboratory of Information Material, Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin, Guangxi 541004, China 2Department of Materials Physics, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan 3Key Laboratory of Polarized Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200062, China 4Frontier Research Institute for Materials Science, Nagoya Institute of Technology, Nagoya 466-8555, Japan
Funding Information:
This work was supported by the National Natural Science Foundation of China (Grant Nos. 51572049 and 51602068) and the Guangxi Natural Science Foundation of China (Grant No. 2015GXNSFFA139002).
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/1
Y1 - 2018/1
N2 - The use of nanostructured thermoelectric materials that can effectively reduce the lattice conductivity with minimal effects on electrical properties has been recognized as the most successful approach to decoupling three key parameters (S, σ, and κ) and reaching high a dimensionless figure of merit (ZT) values. Here, five-period multilayer films consisting of 10 nm B-doped Si, 1.1 nm B, and 13 nm B-doped Ge layers in each period were prepared on Si wafer substrates using a magnetron sputtering system. Nanocrystallites of 22 nm diameter were formed by post-annealing at 800 °C in a short time. The nanostructures were confirmed by X-ray diffraction analysis, Raman spectroscopy, and transmission electron microscopy. The maximum Seebeck coefficient of Si/Ge films is significantly increased to 850 μV/K at 200 °C with their electrical resistivity decreased to 1.3 × 10-5 Ω•m, and the maximum power factor increased to 5.6 × 10-2 W•m-1•K-2. The improved thermoelectric properties of Si/Ge nanostructured films are possibly attributable to the synergistic effects of interface scattering, interface barrier, and quantum dot localization.
AB - The use of nanostructured thermoelectric materials that can effectively reduce the lattice conductivity with minimal effects on electrical properties has been recognized as the most successful approach to decoupling three key parameters (S, σ, and κ) and reaching high a dimensionless figure of merit (ZT) values. Here, five-period multilayer films consisting of 10 nm B-doped Si, 1.1 nm B, and 13 nm B-doped Ge layers in each period were prepared on Si wafer substrates using a magnetron sputtering system. Nanocrystallites of 22 nm diameter were formed by post-annealing at 800 °C in a short time. The nanostructures were confirmed by X-ray diffraction analysis, Raman spectroscopy, and transmission electron microscopy. The maximum Seebeck coefficient of Si/Ge films is significantly increased to 850 μV/K at 200 °C with their electrical resistivity decreased to 1.3 × 10-5 Ω•m, and the maximum power factor increased to 5.6 × 10-2 W•m-1•K-2. The improved thermoelectric properties of Si/Ge nanostructured films are possibly attributable to the synergistic effects of interface scattering, interface barrier, and quantum dot localization.
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U2 - 10.7567/JJAP.57.01AF03
DO - 10.7567/JJAP.57.01AF03
M3 - Article
AN - SCOPUS:85039978326
SN - 0021-4922
VL - 57
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 1
M1 - 01AF03
ER -