Improvement of critical current density in MgB2 by Ti, Zr and Hf doping

D. Goto, T. Machi, Y. Zhao, N. Koshizuka, M. Murakami, S. Arai

Research output: Contribution to journalConference article

44 Citations (Scopus)

Abstract

Ti, Zr and Hf doped MgB2 polycrystalline samples have been prepared by using a hot pressing technique. In Ti doped MgB2, it was found that the optimum concentration of Ti for the critical current density Jc was 5% and Jc value was improved from 1.9×10 5 A/cm2 (Ti 0%) to 5.6×105 A/cm 2 (Ti 5%) in self-field at 10 K. Jc values were also improved to 5.0×105 A/cm2 with 2% Zr doping and to 4.8×105 A/cm2 with 1% Hf doping. We found that the improvement of the irreversibility field Birr with Zr and Hf doping was larger than that of Ti doping.

Original languageEnglish
Pages (from-to)272-275
Number of pages4
JournalPhysica C: Superconductivity and its applications
Volume392-396
Issue numberPART 1
DOIs
Publication statusPublished - 2003 Oct 1
Externally publishedYes
EventProceedings of the 15th International Symposium on Superconduc - Yokohama, Japan
Duration: 2002 Nov 112002 Nov 13

Keywords

  • MgB
  • Pinning properties
  • Superconductivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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