Abstract
Ti, Zr and Hf doped MgB2 polycrystalline samples have been prepared by using a hot pressing technique. In Ti doped MgB2, it was found that the optimum concentration of Ti for the critical current density Jc was 5% and Jc value was improved from 1.9×10 5 A/cm2 (Ti 0%) to 5.6×105 A/cm 2 (Ti 5%) in self-field at 10 K. Jc values were also improved to 5.0×105 A/cm2 with 2% Zr doping and to 4.8×105 A/cm2 with 1% Hf doping. We found that the improvement of the irreversibility field Birr with Zr and Hf doping was larger than that of Ti doping.
| Original language | English |
|---|---|
| Pages (from-to) | 272-275 |
| Number of pages | 4 |
| Journal | Physica C: Superconductivity and its applications |
| Volume | 392-396 |
| Issue number | PART 1 |
| DOIs | |
| Publication status | Published - 2003 Oct 1 |
| Externally published | Yes |
| Event | Proceedings of the 15th International Symposium on Superconduc - Yokohama, Japan Duration: 2002 Nov 11 → 2002 Nov 13 |
Keywords
- MgB
- Pinning properties
- Superconductivity
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering
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Cite this
Goto, D., Machi, T., Zhao, Y., Koshizuka, N., Murakami, M., & Arai, S. (2003). Improvement of critical current density in MgB2 by Ti, Zr and Hf doping. Physica C: Superconductivity and its applications, 392-396(PART 1), 272-275. https://doi.org/10.1016/S0921-4534(03)01081-5