TY - JOUR
T1 - Improvement of DC and RF characteristics of AlGaN/GaN high electron mobility transistors by thermally annealed Ni/Pt/Au schottky gate
AU - Nanjo, Takuma
AU - Miura, Naruhisa
AU - Oishi, Toshiyuki
AU - Suita, Muneyoshi
AU - Abe, Yuji
AU - Ozeki, Tatsuo
AU - Nakatsuka, Shigenori
AU - Indue, Akira
AU - Ishikawa, Takahide
AU - Matsuda, Yoshio
AU - Ishikawa, Hiroyasu
AU - Egawa, Takashi
PY - 2004/4
Y1 - 2004/4
N2 - A thermally annealed Ni/Pt/Au metal structure was employed as the gate contacts of AlGaN/GaN high electron mobility transistors (HEMTs), and their DC and RF performances were investigated. This gate structure markedly improved the Schottky characteristics such as the Schottky barrier height and leakage current. Regarding the DC characteristics, the maximum drain current and off-state breakdown voltage were increased from 0.78 A/mm (Vg = 1 V) to 0.90 A/mm (Vg = 3 V) due to the improved applicability of the gate voltage and from 108V to 178V, respectively, by annealing the gate metals. In addition, a reduction of the transconductance was not observed. Furthermore, even after the deposition of SiNx passivation film, the off-state breakdown voltage remained at a relatively high value of 120V. Regarding the RF characteristics, the cut-off frequency and maximum oscillation frequency were also improved from 10.3 GHz to 13.5 GHz and from 27.5 GHz to 35.1 GHz, respectively, by annealing the gate metals whose gate length was 1 μm.
AB - A thermally annealed Ni/Pt/Au metal structure was employed as the gate contacts of AlGaN/GaN high electron mobility transistors (HEMTs), and their DC and RF performances were investigated. This gate structure markedly improved the Schottky characteristics such as the Schottky barrier height and leakage current. Regarding the DC characteristics, the maximum drain current and off-state breakdown voltage were increased from 0.78 A/mm (Vg = 1 V) to 0.90 A/mm (Vg = 3 V) due to the improved applicability of the gate voltage and from 108V to 178V, respectively, by annealing the gate metals. In addition, a reduction of the transconductance was not observed. Furthermore, even after the deposition of SiNx passivation film, the off-state breakdown voltage remained at a relatively high value of 120V. Regarding the RF characteristics, the cut-off frequency and maximum oscillation frequency were also improved from 10.3 GHz to 13.5 GHz and from 27.5 GHz to 35.1 GHz, respectively, by annealing the gate metals whose gate length was 1 μm.
KW - AIGaN/GaN HEMT
KW - Annealing
KW - GaN
KW - Gate leakage current
KW - Off-state breakdown
KW - Schottky
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U2 - 10.1143/JJAP.43.1925
DO - 10.1143/JJAP.43.1925
M3 - Article
AN - SCOPUS:17144444540
SN - 0021-4922
VL - 43
SP - 1925
EP - 1929
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 4 B
ER -